中国物理B ›› 2019, Vol. 28 ›› Issue (6): 60701-060701.doi: 10.1088/1674-1056/28/6/060701

• GENERAL • 上一篇    下一篇

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

Kang Liu(刘康), Jiwen Zhao(赵继文), Huarui Sun(孙华锐), Huaixin Guo(郭怀新), Bing Dai(代兵), Jiaqi Zhu(朱嘉琦)   

  1. 1 Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China;
    2 Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China;
    3 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, Chin
  • 收稿日期:2018-12-21 修回日期:2019-04-15 出版日期:2019-06-05 发布日期:2019-06-05
  • 通讯作者: Huarui Sun E-mail:huarui.sun@hit.edu.cn
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61604049) and the Shenzhen Municipal Research Project (Grant No. JCYJ20160531192714636).

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

Kang Liu(刘康)1, Jiwen Zhao(赵继文)2, Huarui Sun(孙华锐)1, Huaixin Guo(郭怀新)3, Bing Dai(代兵)2, Jiaqi Zhu(朱嘉琦)2   

  1. 1 Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology, Shenzhen 518055, China;
    2 Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150080, China;
    3 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, Chin
  • Received:2018-12-21 Revised:2019-04-15 Online:2019-06-05 Published:2019-06-05
  • Contact: Huarui Sun E-mail:huarui.sun@hit.edu.cn
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61604049) and the Shenzhen Municipal Research Project (Grant No. JCYJ20160531192714636).

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摘要： Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词: GaN heteroepitaxy, thermal conductivity, transient thermoreflectance, ultraviolet laser

Abstract: Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

Key words: GaN heteroepitaxy, thermal conductivity, transient thermoreflectance, ultraviolet laser

中图分类号:  (Thermal instruments and apparatus)

  • 07.20.-n
65.40.-b (Thermal properties of crystalline solids) 61.72.uj (III-V and II-VI semiconductors)