Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

doi:10.1088/1674-1056/27/8/087504

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87504-087504.doi: 10.1088/1674-1056/27/8/087504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Zhen Wang(王振), Shi-Jie Tan(谭士杰), Jun Li(李俊), Bo Dai(代波), Yan-Ke Zou(邹延珂)

1 State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 The 9 th Institute of China Electronics Technology Group Corporation, Mianyang 621000, China

收稿日期:2017-12-15 修回日期:2018-04-12 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Zhen Wang E-mail:wangzhen@swust.edu.cn
基金资助:
Project supported by the Young Science and Technology Innovation Team of Sichuan Province, China (Grant No. 2017TD0020).

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Zhen Wang(王振)¹, Shi-Jie Tan(谭士杰)^1,2, Jun Li(李俊)¹, Bo Dai(代波)¹, Yan-Ke Zou(邹延珂)²

1 State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;
2 The 9 th Institute of China Electronics Technology Group Corporation, Mianyang 621000, China

Received:2017-12-15 Revised:2018-04-12 Online:2018-08-05 Published:2018-08-05
Contact: Zhen Wang E-mail:wangzhen@swust.edu.cn
Supported by:
Project supported by the Young Science and Technology Innovation Team of Sichuan Province, China (Grant No. 2017TD0020).

摘要/Abstract

摘要： In this paper, Ta/[NiFe(15 nm)/FeMn(10 nm)]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are characterized by using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA), respectively. The exchange bias field H_e and static anisotropy field H_k^sta decrease from 118.45 Oe (1 Oe=79.5775 A·m^-1) and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy (H_rot), the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest H_rot is obtained in the sample annealing with 45-V capacitor (3300 μF) voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system (T_b) at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.

关键词: rapid annealing, sputtering, pulsed current, rotational anisotropy

Abstract: In this paper, Ta/[NiFe(15 nm)/FeMn(10 nm)]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are characterized by using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA), respectively. The exchange bias field H_e and static anisotropy field H_k^sta decrease from 118.45 Oe (1 Oe=79.5775 A·m^-1) and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy (H_rot), the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest H_rot is obtained in the sample annealing with 45-V capacitor (3300 μF) voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system (T_b) at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.

Key words: rapid annealing, sputtering, pulsed current, rotational anisotropy

中图分类号: (Magnetic properties of monolayers and thin films)

75.70.Ak

91.25.St (Magnetic fabrics and anisotropy)

王振, 谭士杰, 李俊, 代波, 邹延珂. Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film[J]. 中国物理B, 2018, 27(8): 87504-087504.

Zhen Wang(王振), Shi-Jie Tan(谭士杰), Jun Li(李俊), Bo Dai(代波), Yan-Ke Zou(邹延珂). Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film[J]. Chin. Phys. B, 2018, 27(8): 87504-087504.

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Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

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