中国物理B ›› 2018, Vol. 27 ›› Issue (2): 26102-026102.doi: 10.1088/1674-1056/27/2/026102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO2 nanowire arrays

Ying Wang(王莹), Xin-Hua Li(李新化)   

  1. 1. College of Electrical Engineering and Automation, Anhui University, Hefei 230601, China;
    2. Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;
    3. Yuhuan Scientific and Technological Transformation Center, Chinese Academy of Sciences, Taizhou 317600, China
  • 收稿日期:2017-09-14 修回日期:2017-11-04 出版日期:2018-02-05 发布日期:2018-02-05
  • 通讯作者: Xin-Hua Li E-mail:xinhuali@issp.ac.cn
  • 基金资助:
    Project supported by the Science and Technology Project of Zhejiang Province, China (Grant No. 2017C31120).

Light trapping and optical absorption enhancement in vertical semiconductor Si/SiO2 nanowire arrays

Ying Wang(王莹)1, Xin-Hua Li(李新化)2,3   

  1. 1. College of Electrical Engineering and Automation, Anhui University, Hefei 230601, China;
    2. Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;
    3. Yuhuan Scientific and Technological Transformation Center, Chinese Academy of Sciences, Taizhou 317600, China
  • Received:2017-09-14 Revised:2017-11-04 Online:2018-02-05 Published:2018-02-05
  • Contact: Xin-Hua Li E-mail:xinhuali@issp.ac.cn
  • About author:61.46.Km; 71.35.Cc; 61.46.-w
  • Supported by:
    Project supported by the Science and Technology Project of Zhejiang Province, China (Grant No. 2017C31120).

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摘要： The full potential of optical absorption property must be further cultivated before silicon (Si) semiconductor nanowire (NW) arrays become available for mainstream applications in optoelectronic devices. In this paper, we demonstrate both experimentally and theoretically that an SiO2 coating can substantially improve the absorption of light in Si NW arrays. When the transparent SiO2 shell is coated on the outer layer of Si NW, the incident light penetrates better into the absorbing NW core. We provide the detailed theoretical analysis by a combination of finite-difference time-domain (FDTD) analysis. It is demonstrated that increasing the thickness of the dielectric shell, we achieve 1.72 times stronger absorption in the NWs than in uncoated NWs.

关键词: nanowire, nanosphere lithography, finite-difference time-domain (FDTD)

Abstract: The full potential of optical absorption property must be further cultivated before silicon (Si) semiconductor nanowire (NW) arrays become available for mainstream applications in optoelectronic devices. In this paper, we demonstrate both experimentally and theoretically that an SiO2 coating can substantially improve the absorption of light in Si NW arrays. When the transparent SiO2 shell is coated on the outer layer of Si NW, the incident light penetrates better into the absorbing NW core. We provide the detailed theoretical analysis by a combination of finite-difference time-domain (FDTD) analysis. It is demonstrated that increasing the thickness of the dielectric shell, we achieve 1.72 times stronger absorption in the NWs than in uncoated NWs.

Key words: nanowire, nanosphere lithography, finite-difference time-domain (FDTD)

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
71.35.Cc (Intrinsic properties of excitons; optical absorption spectra) 61.46.-w (Structure of nanoscale materials)