Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

doi:10.1088/1674-1056/26/5/058502

中国物理B ›› 2017, Vol. 26 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/26/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Chun-Lei Shi(史春蕾), Qing-Yang Fan(樊庆扬), Yu-Qian Liu(刘彧千)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-12-03 修回日期:2017-01-18 出版日期:2017-05-05 发布日期:2017-05-05
通讯作者: Yu-Hang Zhang E-mail:yhzhang0916@foxmail.com
基金资助:
Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Chun-Lei Shi(史春蕾), Qing-Yang Fan(樊庆扬), Yu-Qian Liu(刘彧千)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-12-03 Revised:2017-01-18 Online:2017-05-05 Published:2017-05-05
Contact: Yu-Hang Zhang E-mail:yhzhang0916@foxmail.com
Supported by:
Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).

摘要/Abstract

摘要： The thermal failure induced by high power microwave (HPM) in a complementary metal oxide semiconductor (CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.

关键词: temperature model, microwave damage, pulse width, frequency effect

Abstract: The thermal failure induced by high power microwave (HPM) in a complementary metal oxide semiconductor (CMOS) inverter is investigated and its dependence on microwave parameters is discussed in detail. An analytical model of the temperature distribution is established and the relationships between hotspot temperature and pulse width and between hotspot temperature and frequency are predicted, which reveals a more severe rise in temperature under the influence of microwave with longer width and lower frequency. The temperature variation mechanism and the theoretical temperature model are validated and explained by the simulation. Furthermore, variation trend of damage threshold with microwave parameters is derived theoretically, and the conclusions are consistent with simulation results and reported data.

Key words: temperature model, microwave damage, pulse width, frequency effect

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

张宇航, 柴常春, 刘阳, 杨银堂, 史春蕾, 樊庆扬, 刘彧千. Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter[J]. 中国物理B, 2017, 26(5): 58502-058502.

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Yang Liu(刘阳), Yin-Tang Yang(杨银堂), Chun-Lei Shi(史春蕾), Qing-Yang Fan(樊庆扬), Yu-Qian Liu(刘彧千). Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter[J]. Chin. Phys. B, 2017, 26(5): 58502-058502.

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Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter

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