[1] |
Moschetti G, Wadefalk N, Nilsson P A, Abbasi M, Desplanque L, Wallart X and Grahn J 2012 IEEE Microw. Wirel. Compon. Lett. 22 144
|
[2] |
Moschetti G, Wadefalk N, Nilsson P A, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S and Grahn J 2011 Solid State Electron 64 47
|
[3] |
Malmkvist M, Lefebvre E, Borg M, Desplanque L, Wallart X, Dambrine G, Bollaert S and Grahn J 2008 IEEE Trans. Microw. Theory Tech. 56 2685
|
[4] |
Mark Isler and Klaus Schüneman 2004 IEEE Trans. Microwave Theory Tech. 52 858
|
[5] |
Vasallo B G, Rodilla H and Gonzalez T 2010 J. Appl. Phys. 108 094505
|
[6] |
Vasallo B G, Rodilla H, Gonzalez T, Moschetti G, Grahn J and Mateos J 2012 Semicond. Sci. Technol. 27 065018
|
[7] |
Reuter R, Agethen M, Auer U, Van Waasen S, Peters D, Brockerhoff W and Tegude J 1997 IEEE Journals & Magazines 45 977
|
[8] |
Isle M 2002 Solid-State Electronics 46 1587
|
[9] |
Guan H, Lv H l, Guo H and Zhang Y M 2015 J. Appl. Phys. 118 195702
|
[10] |
Dambrine G, Cappy A, Heliodore F and Playez E 1998 IEEE Trans. Microw Theory Techn. 36 1151
|
[11] |
Ranjit S and Christopher S M 1998 Electron Devices 45 1165
|
[12] |
Rorsman N, Garcia M, Karlsson C and Zirath H 1996 IEEE Trans. Electron Devices 44 432
|
[13] |
Alt A R, Marti D and Bolognesi C R 2013 IEEE Microw. Mag. 14 83
|
[14] |
Ma B Y, Bergman J, Chen P, Hacker J B, Sullivan G, Nagy G and Brar B 2006 IEEE Trans. Microwave Theory Tech. 54 4448
|
[15] |
Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S and Grahn J 2008 Solid State Electron. 52 775
|
[16] |
Anwar J and Günter K 2005 IEEE Trans. Electron Devices 53 3440
|
[17] |
Lefebvre E, Malmkvist M, Borg M, Desplanque L, Wallart X, Dambrine G, Bollaert S and Grahn J 2009 Electron Devices 56 1904
|
[18] |
Van Niekerk C, Meyer P, Schreurs M P and Winson P B 2000 IEEE Trans. Microwave Theory Tech. 48 777
|
[19] |
Arai T, Sawada K, Okamoto N, Makiyama K, Takahashi T and Hara N 2003 IEEE Trans. Electron Devices 50 1189
|
[20] |
Bolognesi C R, Dvorak M W and Chow D H 1999 IEEE Trans. Electron Devices 46 826
|
[21] |
He Y L, Hao Y and Zhang X F 2014 Chin. Phys. Lett. 31 128501
|
[22] |
Chen H F 2014 Chin. Phys. B 23 128502
|
[23] |
Hu X R and Lü R 2014 Chin. Phys. B 23 128501
|