中国物理B ›› 2017, Vol. 26 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/26/5/058501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

He Guan(关赫), Hui Guo(郭辉)   

  1. 1 Northwestern Polytechnical University, Xi'an 710072, China;
    2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China
  • 收稿日期:2016-12-17 修回日期:2016-02-04 出版日期:2017-05-05 发布日期:2017-05-05
  • 通讯作者: Hui Guo E-mail:Guohui@mail.xidian.edu.cn

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

He Guan(关赫)1, Hui Guo(郭辉)2   

  1. 1 Northwestern Polytechnical University, Xi'an 710072, China;
    2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China
  • Received:2016-12-17 Revised:2016-02-04 Online:2017-05-05 Published:2017-05-05
  • Contact: Hui Guo E-mail:Guohui@mail.xidian.edu.cn

摘要: An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτi) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτi) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτi) is helpful in further improving the modeling accuracy degree.

关键词: InAs/AlSb HFET, impact ionization, frequency dependency, small-signal equivalent circuit model

Abstract: An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτi) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτi) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτi) is helpful in further improving the modeling accuracy degree.

Key words: InAs/AlSb HFET, impact ionization, frequency dependency, small-signal equivalent circuit model

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)