中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118403-118403.doi: 10.1088/1674-1056/25/11/118403

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Theoretical investigation of frequency characteristics of free oscillation and injection-locked magnetrons

Song Yue(岳松), Dong-ping Gao(高冬平), Zhao-chuan Zhang(张兆传), Wei-long Wang(王韦龙)   

  1. 1 Key Laboratory of High Power Microwave Sources and Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2016-05-24 修回日期:2016-07-10 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Song Yue E-mail:yuessd@163.com
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB328901) and the National Natural Science Foundation of China (Grant No. 11305177).

Theoretical investigation of frequency characteristics of free oscillation and injection-locked magnetrons

Song Yue(岳松)1,2, Dong-ping Gao(高冬平)1, Zhao-chuan Zhang(张兆传)1, Wei-long Wang(王韦龙)1,2   

  1. 1 Key Laboratory of High Power Microwave Sources and Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2016-05-24 Revised:2016-07-10 Online:2016-11-05 Published:2016-11-05
  • Contact: Song Yue E-mail:yuessd@163.com
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB328901) and the National Natural Science Foundation of China (Grant No. 11305177).

摘要: The frequency characteristics of free oscillation magnetron (FOM) and injection-locked magnetron (ILM) are theoretically investigated. By using the equal power voltage obtained from the experiment data, expressions of the frequency and radio frequency (RF) voltage of FOM and ILM, as well as the locking bandwidth, on the anode voltage and magnetic field are derived. With the increase of the anode voltage and the decrease of the magnetic field, the power and its growth rate increase, while the frequency increases and its growth rate decreases. The theoretical frequency and power of FOM agree with the particle-in-cell (PIC) simulation results. Besides, the theoretical trends of the power and frequency with the anode voltage and magnetic field are consistent with the experimental results, which verifies the accuracy of the theory. The theory provides a novel calculation method of frequency characteristics. It can approximately analyze the power and frequency of both FOM and ILM, which promotes the industrial applications of magnetron and microwave energy.

关键词: frequency, free oscillation magnetron, injection-locked magnetron, locking bandwidth

Abstract: The frequency characteristics of free oscillation magnetron (FOM) and injection-locked magnetron (ILM) are theoretically investigated. By using the equal power voltage obtained from the experiment data, expressions of the frequency and radio frequency (RF) voltage of FOM and ILM, as well as the locking bandwidth, on the anode voltage and magnetic field are derived. With the increase of the anode voltage and the decrease of the magnetic field, the power and its growth rate increase, while the frequency increases and its growth rate decreases. The theoretical frequency and power of FOM agree with the particle-in-cell (PIC) simulation results. Besides, the theoretical trends of the power and frequency with the anode voltage and magnetic field are consistent with the experimental results, which verifies the accuracy of the theory. The theory provides a novel calculation method of frequency characteristics. It can approximately analyze the power and frequency of both FOM and ILM, which promotes the industrial applications of magnetron and microwave energy.

Key words: frequency, free oscillation magnetron, injection-locked magnetron, locking bandwidth

中图分类号:  (Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.))

  • 84.40.Fe
42.25.Kb (Coherence) 52.65.Rr (Particle-in-cell method)