Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

doi:10.1088/1674-1056/24/3/038503

中国物理B ›› 2015, Vol. 24 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/24/3/038503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

柳铭岗, 王云茜, 杨亿斌, 林秀其, 向鹏, 陈伟杰, 韩小标, 臧文杰, 廖强, 林佳利, 罗慧, 吴志盛, 刘扬, 张佰君

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

收稿日期:2014-07-30 修回日期:2014-10-20 出版日期:2015-03-05 发布日期:2015-03-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), and the Foundation of the Key Technologies R&D Program of Guangdong Province, China (Grant No. 2010A081002005).These authors contributed equally to this work.

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Received:2014-07-30 Revised:2014-10-20 Online:2015-03-05 Published:2015-03-05
Contact: Zhang Bai-Jun E-mail:zhbaij@mail.sysu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant Nos. 2010CB923201 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), and the Foundation of the Key Technologies R&D Program of Guangdong Province, China (Grant No. 2010A081002005).These authors contributed equally to this work.

摘要/Abstract

摘要：

Crack-free GaN/InGaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer (TCL), which could not be applied in the conventional p-side-up LEDs due to the electrode-shading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 mA, in comparison to conventional LEDs on Si.

关键词: light-emitting diodes, embedded wide p-electrodes, Si substrate, electroplating Cu submount

Abstract:

Key words: light-emitting diodes, embedded wide p-electrodes, Si substrate, electroplating Cu submount

中图分类号: (Light-emitting devices)

85.60.Jb

61.72.uj (III-V and II-VI semiconductors) 82.45.Qr (Electrodeposition and electrodissolution)

柳铭岗, 王云茜, 杨亿斌, 林秀其, 向鹏, 陈伟杰, 韩小标, 臧文杰, 廖强, 林佳利, 罗慧, 吴志盛, 刘扬, 张佰君. Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes[J]. 中国物理B, 2015, 24(3): 38503-038503.

Liu Ming-Gang (柳铭岗), Wang Yun-Qian (王云茜), Yang Yi-Bin (杨亿斌), Lin Xiu-Qi (林秀其), Xiang Peng (向鹏), Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Zang Wen-Jie (臧文杰), Liao Qiang (廖强), Lin Jia-Li (林佳利), Luo Hui (罗慧), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君). Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes[J]. Chin. Phys. B, 2015, 24(3): 38503-038503.

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Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes

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