Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

doi:10.1088/1674-1056/24/5/057303

中国物理B ›› 2015, Vol. 24 ›› Issue (5): 57303-057303.doi: 10.1088/1674-1056/24/5/057303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

倪毅强, 贺致远, 姚尧, 杨帆, 周德秋, 周桂林, 沈震, 钟健, 郑越, 张佰君, 刘扬

School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2014-10-09 修回日期:2014-12-24 出版日期:2015-05-05 发布日期:2015-05-05
基金资助:
Project Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China

Received:2014-10-09 Revised:2014-12-24 Online:2015-05-05 Published:2015-05-05
Contact: Liu Yang E-mail:liuy69@mail.sysu.edu.cn
About author:73.40.-c; 73.61.Ey; 81.15.Gh; 78.55.Cr
Supported by:
Project Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

摘要/Abstract

摘要： We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (～ 10⁹). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

关键词: heterostructure field effect transistor (HFET), GaN on Si, interlayers, high on/off ratio

Abstract: We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (～ 10⁹). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

Key words: heterostructure field effect transistor (HFET), GaN on Si, interlayers, high on/off ratio

中图分类号: (Electronic transport in interface structures)

73.40.-c

73.61.Ey (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.55.Cr (III-V semiconductors)

倪毅强, 贺致远, 姚尧, 杨帆, 周德秋, 周桂林, 沈震, 钟健, 郑越, 张佰君, 刘扬. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate[J]. 中国物理B, 2015, 24(5): 57303-057303.

Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Yao Yao (姚尧), Yang Fan (杨帆), Zhou De-Qiu (周德秋), Zhou Gui-Lin (周桂林), Shen Zhen (沈震), Zhong Jian (钟健), Zheng Yue (郑越), Zhang Bai-Jun (张佰君), Liu Yang (刘扬). Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate[J]. Chin. Phys. B, 2015, 24(5): 57303-057303.

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Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

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