中国物理B ›› 2015, Vol. 24 ›› Issue (2): 28101-028101.doi: 10.1088/1674-1056/24/2/028101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

王俊, 胡海洋, 邓灿, 贺云瑞, 王琦, 段晓峰, 黄永清, 任晓敏   

  1. Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT), State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
  • 收稿日期:2014-08-04 修回日期:2014-09-11 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013RC1205) and the National Basic Research Program of China (Grant No. 2010CB327601).

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Wang Jun (王俊), Hu Hai-Yang (胡海洋), Deng Can (邓灿), He Yun-Rui (贺云瑞), Wang Qi (王琦), Duan Xiao-Feng (段晓峰), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏)   

  1. Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT), State Key Laboratory of Information Photonics and Optical Communications (BUPT), Beijing 100876, China
  • Received:2014-08-04 Revised:2014-09-11 Online:2015-02-05 Published:2015-02-05
  • Contact: Wang Jun E-mail:wangjun12@bupt.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2013RC1205) and the National Basic Research Program of China (Grant No. 2010CB327601).

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摘要： The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5×107 cm-2 in the GaAs/Si sample without QDs, a density of 2×106 cm-2 is achieved in the sample with QD dislocation filters.

关键词: GaAs-on-Si growth, dislocation filter, quantum dot

Abstract: The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5×107 cm-2 in the GaAs/Si sample without QDs, a density of 2×106 cm-2 is achieved in the sample with QD dislocation filters.

Key words: GaAs-on-Si growth, dislocation filter, quantum dot

中图分类号:  (III-V semiconductors)

  • 81.05.Ea
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 81.07.Ta (Quantum dots) 61.72.Lk (Linear defects: dislocations, disclinations)