Study of Nb/NbxSi1-x/Nb Josephson junction arrays

doi:10.1088/1674-1056/24/12/127402

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 127402-127402.doi: 10.1088/1674-1056/24/12/127402

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays

曹文会, 李劲劲, 钟源, 贺青

National Institute of Metrology, Beijing 100029, China

收稿日期:2015-05-09 修回日期:2015-08-19 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Cao Wen-Hui, Li Jin-Jin E-mail:caowh@nim.ac.cn;jinjinli@nim.ac.cn
基金资助:
Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAK15B00), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401418), and the Basic Research Foundation of National Institute of Metrology of China (Grant No. 20-AKY1415).

Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays

Cao Wen-Hui (曹文会), Li Jin-Jin (李劲劲), Zhong Yuan (钟源), He Qing (贺青)

National Institute of Metrology, Beijing 100029, China

Received:2015-05-09 Revised:2015-08-19 Online:2015-12-05 Published:2015-12-05
Contact: Cao Wen-Hui, Li Jin-Jin E-mail:caowh@nim.ac.cn;jinjinli@nim.ac.cn
Supported by:
Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAK15B00), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61401418), and the Basic Research Foundation of National Institute of Metrology of China (Grant No. 20-AKY1415).

摘要/Abstract

摘要： Owing to the adjustable characteristics and superior etching properties of co-sputtered Nb_xSi_1-x film, we are trying to fabricate Nb/Nb_xSi_1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nb_xSi_1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current-voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.

关键词: Josephson junctions, critical current, voltage standard

Abstract: Owing to the adjustable characteristics and superior etching properties of co-sputtered Nb_xSi_1-x film, we are trying to fabricate Nb/Nb_xSi_1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nb_xSi_1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current-voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.

Key words: Josephson junctions, critical current, voltage standard

中图分类号: (Josephson junction arrays and wire networks)

74.81.Fa

74.25.Sv (Critical currents) 06.20.F- (Units and standards)

曹文会, 李劲劲, 钟源, 贺青. Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays[J]. 中国物理B, 2015, 24(12): 127402-127402.

Cao Wen-Hui (曹文会), Li Jin-Jin (李劲劲), Zhong Yuan (钟源), He Qing (贺青). Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays[J]. Chin. Phys. B, 2015, 24(12): 127402-127402.

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Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays

Study of Nb/Nb_xSi_1-x/Nb Josephson junction arrays

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