Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

doi:10.1088/1674-1056/24/10/107705

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107705-107705.doi: 10.1088/1674-1056/24/10/107705

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

芦增星^a, 宋骁^a, 赵丽娜^a, 李忠文^a, 林远彬^a, 曾敏^a, 张璋^a, 陆旭兵^a, 吴素娟^a, 高兴森^a, 严志波^b, 刘俊明^b

a Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China;
b Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

收稿日期:2015-03-10 修回日期:2015-05-14 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

Lu Zeng-Xing (芦增星)^a, Song Xiao (宋骁)^a, Zhao Li-Na (赵丽娜)^a, Li Zhong-Wen (李忠文)^a, Lin Yuan-Bin (林远彬)^a, Zeng Min (曾敏)^a, Zhang Zhang (张璋)^a, Lu Xu-Bing (陆旭兵)^a, Wu Su-Juan (吴素娟)^a, Gao Xing-Sen (高兴森)^a, Yan Zhi-Bo (严志波)^b, Liu Jun-Ming (刘俊明)^b

a Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China;
b Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Received:2015-03-10 Revised:2015-05-14 Online:2015-10-05 Published:2015-10-05
Contact: Gao Xing-Sen, Liu Jun-Ming E-mail:xingsengao@scnu.edu.cn;liujm@nju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

摘要/Abstract

摘要： We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO₃ thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (< 253 K), the I-V curve shows an open circuit voltage (OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of >298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.

关键词: ferroelectric, memristor, resistive random access memory

Abstract: We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO₃ thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (< 253 K), the I-V curve shows an open circuit voltage (OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of >298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.

Key words: ferroelectric, memristor, resistive random access memory

中图分类号: (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

77.84.-s

77.80.-e (Ferroelectricity and antiferroelectricity) 85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits) 73.50.-h (Electronic transport phenomena in thin films)

芦增星, 宋骁, 赵丽娜, 李忠文, 林远彬, 曾敏, 张璋, 陆旭兵, 吴素娟, 高兴森, 严志波, 刘俊明. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films[J]. 中国物理B, 2015, 24(10): 107705-107705.

Lu Zeng-Xing (芦增星), Song Xiao (宋骁), Zhao Li-Na (赵丽娜), Li Zhong-Wen (李忠文), Lin Yuan-Bin (林远彬), Zeng Min (曾敏), Zhang Zhang (张璋), Lu Xu-Bing (陆旭兵), Wu Su-Juan (吴素娟), Gao Xing-Sen (高兴森), Yan Zhi-Bo (严志波), Liu Jun-Ming (刘俊明). Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films[J]. Chin. Phys. B, 2015, 24(10): 107705-107705.

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Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

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