›› 2015, Vol. 24 ›› Issue (1): 17701-017701.doi: 10.1088/1674-1056/24/1/017701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Ferroelectricity in hexagonal YFeO3 film at room temperature

张润兰a b, 陈长乐a, 张云婕a, 邢辉a, 董祥雷a, 金克新a   

  1. a Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi'an 710072, China;
    b College of Chemistry and Chemical Engineering, Xi'an University of Science and Technology, Xi'an 710054, China
  • 收稿日期:2014-06-04 修回日期:2014-08-25 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51202195, and 511172183), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20126102110045), and the NPU Foundation for Fundamental Research (Grant Nos. JC201155, JC201271, and JC20120246).

Ferroelectricity in hexagonal YFeO3 film at room temperature

Zhang Run-Lan (张润兰)a b, Chen Chang-Le (陈长乐)a, Zhang Yun-Jie (张云婕)a, Xing Hui (邢辉)a, Dong Xiang-Lei (董祥雷)a, Jin Ke-Xin (金克新)a   

  1. a Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi'an 710072, China;
    b College of Chemistry and Chemical Engineering, Xi'an University of Science and Technology, Xi'an 710054, China
  • Received:2014-06-04 Revised:2014-08-25 Online:2015-01-05 Published:2015-01-05
  • Contact: Chen Chang-Le E-mail:chenchl@nwpu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51202195, and 511172183), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20126102110045), and the NPU Foundation for Fundamental Research (Grant Nos. JC201155, JC201271, and JC20120246).

摘要: In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFeO3 film with hexagonal structure, which was fabricated on Si(111) substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4× 10-6A/cm2 under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P-E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature. The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy, which testifies to the ferroelectricity of the YFeO3 film further.

关键词: hexagonal YFeO3, multiferroic, ferroelectricity, piezoresponse force microscopy

Abstract: In this paper we report the leakage current, ferroelectric and piezoelectric properties of the YFeO3 film with hexagonal structure, which was fabricated on Si(111) substrate by a simple sol-gel method. The leakage current test shows good characteristics as the leakage current density is 5.4× 10-6A/cm2 under 5 V. The dominant leakage mechanism is found to be an Ohmic behavior at low electric field and space-charge-limited conduction at high electric field region. The P-E measurements show ferroelectric hysteresis loops with small remnant polarization and coercive field at room temperature. The distinct and switchable domain structures on the nanometer scale are observed by piezoresponse force microscopy, which testifies to the ferroelectricity of the YFeO3 film further.

Key words: hexagonal YFeO3, multiferroic, ferroelectricity, piezoresponse force microscopy

中图分类号:  (Multiferroic/magnetoelectric films)

  • 77.55.Nv
77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials) 68.37.Ps (Atomic force microscopy (AFM)) 73.40.-c (Electronic transport in interface structures)