Organic magnetoresistance based on hopping theory

doi:10.1088/1674-1056/23/9/097306

›› 2014, Vol. 23 ›› Issue (9): 97306-097306.doi: 10.1088/1674-1056/23/9/097306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Organic magnetoresistance based on hopping theory

杨福江, 解士杰

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2013-12-26 修回日期:2014-03-05 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB923402), the National Natural Science Foundation of China (Grant Nos. 11174181 and 21161160445), and the Program of Introducing Talents of Discipline to Universities, China (Grant No. B13029).

Organic magnetoresistance based on hopping theory

Yang Fu-Jiang (杨福江), Xie Shi-Jie (解士杰)

School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2013-12-26 Revised:2014-03-05 Online:2014-09-15 Published:2014-09-15
Contact: Xie Shi-Jie E-mail:xsj@sdu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB923402), the National Natural Science Foundation of China (Grant Nos. 11174181 and 21161160445), and the Program of Introducing Talents of Discipline to Universities, China (Grant No. B13029).

摘要/Abstract

摘要： For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

关键词: hopping, organic magnetoresistance, master equation, hyperfine interaction

Abstract: For the organic magnetoresistance (OMAR) effect, we suggest a spin-related hopping of carriers (polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation (ME) and then the magnetoresistance (MR) is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder, hyperfine interaction (HFI), polaron localization, and temperature on the MR are investigated.

Key words: hopping, organic magnetoresistance, master equation, hyperfine interaction

中图分类号: (Electronic transport phenomena in thin films)

73.50.-h

72.20.Ee (Mobility edges; hopping transport) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)

杨福江, 解士杰. Organic magnetoresistance based on hopping theory[J]. , 2014, 23(9): 97306-097306.

Yang Fu-Jiang (杨福江), Xie Shi-Jie (解士杰). Organic magnetoresistance based on hopping theory[J]. Chin. Phys. B, 2014, 23(9): 97306-097306.

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Organic magnetoresistance based on hopping theory

Organic magnetoresistance based on hopping theory

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