中国物理B ›› 2014, Vol. 23 ›› Issue (5): 58701-058701.doi: 10.1088/1674-1056/23/5/058701

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-power terahertz pulse sensor with overmoded structure

王雪锋a b, 王建国a c, 王光强a b, 李爽a b, 熊正锋a b   

  1. a Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    b Science and Technology on High Power Microwave Laboratory, Xi'an 710024, China;
    c School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:2013-09-23 修回日期:2013-10-22 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61231003).

High-power terahertz pulse sensor with overmoded structure

Wang Xue-Feng (王雪锋)a b, Wang Jian-Guo (王建国)a c, Wang Guang-Qiang (王光强)a b, Li Shuang (李爽)a b, Xiong Zheng-Feng (熊正锋)a b   

  1. a Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    b Science and Technology on High Power Microwave Laboratory, Xi'an 710024, China;
    c School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2013-09-23 Revised:2013-10-22 Online:2014-05-15 Published:2014-05-15
  • Contact: Wang Jian-Guo E-mail:wanguiuc@mail.xjtu.edu.cn
  • About author:87.50.U-
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61231003).

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摘要： Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investigated. The distribution of electromagnetic field components, voltage standing wave ratio (VSWR), and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain (FDTD) method. By adjusting several factors (such as the length, width, height and specific resistance of the silicon block) a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW-1, with a fluctuation of relative sensitivity of no more than ± 22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.

关键词: hot electron effect, high power, terahertz pulse, overmoded structure

Abstract: Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investigated. The distribution of electromagnetic field components, voltage standing wave ratio (VSWR), and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain (FDTD) method. By adjusting several factors (such as the length, width, height and specific resistance of the silicon block) a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW-1, with a fluctuation of relative sensitivity of no more than ± 22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.

Key words: hot electron effect, high power, terahertz pulse, overmoded structure

中图分类号: 

  • 87.50.U-