Topological insulator nanostructures and devices

doi:10.1088/1674-1056/22/09/096104

摘要/Abstract

摘要： Topological insulators’ properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.

关键词: topological insulators, nanostructures, quantum spin Hall effect, Aharonov-Bohm effect

Abstract: Topological insulators’ properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.

Key words: topological insulators, nanostructures, quantum spin Hall effect, Aharonov-Bohm effect

中图分类号: (Structure of nanoscale materials)

61.46.-w

62.25.-g (Mechanical properties of nanoscale systems) 64.70.kg (Semiconductors)

修发贤, 赵彤彤. Topological insulator nanostructures and devices[J]. 中国物理B, 2013, 22(9): 96104-096104.

Xiu Fa-Xian (修发贤), Zhao Tong-Tong (赵彤彤). Topological insulator nanostructures and devices[J]. Chin. Phys. B, 2013, 22(9): 96104-096104.

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