Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

doi:10.1088/1674-1056/22/10/107703

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107703-107703.doi: 10.1088/1674-1056/22/10/107703

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

卢卫芳, 李成, 黄诗浩, 林光杨, 王尘, 严光明, 黄巍, 赖虹凯, 陈松岩

Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

收稿日期:2013-03-29 修回日期:2013-07-11 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Lu Wei-Fang (卢卫芳), Li Cheng (李成), Huang Shi-Hao (黄诗浩), Lin Guang-Yang (林光杨), Wang Chen (王尘), Yan Guang-Ming (严光明), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩)

Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

Received:2013-03-29 Revised:2013-07-11 Online:2013-08-30 Published:2013-08-30
Contact: Li Cheng E-mail:lich@xmu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

摘要/Abstract

摘要： Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal-oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si₃N₄ or SiO₂ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si₃N₄ is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.

关键词: Ge nano-belts, FDTD, Si₃N₄ or SiO₂, uniaxially strain

Abstract: Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal-oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si₃N₄ or SiO₂ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si₃N₄ is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.

Key words: Ge nano-belts, FDTD, Si₃N₄ or SiO₂, uniaxially strain

中图分类号: (Strain and interface effects)

77.80.bn

78.20.Bh (Theory, models, and numerical simulation) 77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

卢卫芳, 李成, 黄诗浩, 林光杨, 王尘, 严光明, 黄巍, 赖虹凯, 陈松岩. Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics[J]. 中国物理B, 2013, 22(10): 107703-107703.

Lu Wei-Fang (卢卫芳), Li Cheng (李成), Huang Shi-Hao (黄诗浩), Lin Guang-Yang (林光杨), Wang Chen (王尘), Yan Guang-Ming (严光明), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩). Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics[J]. Chin. Phys. B, 2013, 22(10): 107703-107703.

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Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

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