Improving lithographic masks with the assistance of indentations

doi:10.1088/1674-1056/21/5/057301

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 57301-057301.doi: 10.1088/1674-1056/21/5/057301

Improving lithographic masks with the assistance of indentations

郭英楠¹,李旭峰²,潘石¹,王乔¹,王硕¹,吴永宽¹

1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;
2. School of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024, China

收稿日期:2011-09-03 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10974025).

Improving lithographic masks with the assistance of indentations

Guo Ying-Nan(郭英楠)^a), Li Xu-Feng(李旭峰)^b)^†, Pan Shi(潘石)^a)^‡, Wang Qiao(王乔)^a), Wang Shuo(王硕)^a), and Wu Yong-Kuan(吴永宽)^a)

a. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;
b. School of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024, China

Received:2011-09-03 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10974025).

摘要/Abstract

摘要： Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain (FDTD) method. Such a designed mask is capable of enhancing near field lithography (NFL) resolution more than three times compared with the structure without indentations. The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations. As a straightforward consequence, the channel-to-channel interspaces can be shortened significantly, maintaining a uniform field distribution and high contrast.

关键词: surface plasmons, lithography, finite-difference time domain (FDTD) method

Abstract: Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain (FDTD) method. Such a designed mask is capable of enhancing near field lithography (NFL) resolution more than three times compared with the structure without indentations. The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations. As a straightforward consequence, the channel-to-channel interspaces can be shortened significantly, maintaining a uniform field distribution and high contrast.

Key words: surface plasmons, lithography, finite-difference time domain (FDTD) method

中图分类号: (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))

73.20.Mf

42.82.Cr (Fabrication techniques; lithography, pattern transfer) 02.60.Cb (Numerical simulation; solution of equations)

郭英楠, 李旭峰, 潘石, 王乔, 王硕, 吴永宽. Improving lithographic masks with the assistance of indentations[J]. 中国物理B, 2012, 21(5): 57301-057301.

Guo Ying-Nan(郭英楠), Li Xu-Feng(李旭峰), Pan Shi(潘石), Wang Qiao(王乔), Wang Shuo(王硕), and Wu Yong-Kuan(吴永宽) . Improving lithographic masks with the assistance of indentations[J]. Chin. Phys. B, 2012, 21(5): 57301-057301.

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Improving lithographic masks with the assistance of indentations

Improving lithographic masks with the assistance of indentations

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