Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

doi:10.1088/1674-1056/22/1/017801

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17801-017801.doi: 10.1088/1674-1056/22/1/017801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

周安^{a b}, 修向前^b, 张荣^b, 谢自力^b, 华雪梅^b, 刘斌^b, 韩平^b, 顾书林^b, 施毅^b, 郑有炓^b

a School of Physics, Nanjing University, Nanjing 210093, China;
b Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

收稿日期:2012-04-20 修回日期:2012-07-12 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB301900), the National High Technology Research and Development Program of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and 60936004), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178).

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Zhou An (周安)^{a b}, Xiu Xiang-Qian (修向前)^b, Zhang Rong (张荣)^b, Xie Zi-Li (谢自力)^b, Hua Xue-Mei (华雪梅)^b, Liu Bin (刘斌)^b, Han Ping (韩平)^b, Gu Shu-Lin (顾书林)^b, Shi Yi (施毅)^b, Zheng You-Dou (郑有炓)^b

a School of Physics, Nanjing University, Nanjing 210093, China;
b Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received:2012-04-20 Revised:2012-07-12 Online:2012-12-01 Published:2012-12-01
Contact: Xiu Xiang-Qian E-mail:xqxiu@nju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB301900), the National High Technology Research and Development Program of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, and 60936004), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010, BK2010385, BK2009255, and BK2010178).

摘要/Abstract

摘要： To understand the mechanism of Gallium nitride (GaN) film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics (CFD) and molecular dynamics (MD) simulations. Both of the two simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides the insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.

关键词: GaN growth, computational fluid dynamics, molecular dynamics

Abstract: To understand the mechanism of Gallium nitride (GaN) film growth is of great importance for their potential applications. In this paper, we investigate the growth behavior of the GaN film by combining computational fluid dynamics (CFD) and molecular dynamics (MD) simulations. Both of the two simulations show that V/III mixture degree can have important impacts on the deposition behavior, and it is found that the more uniform the mixture is, the better the growth is. Besides, by using MD simulations, we illustrate the whole process of the GaN growth. Furthermore, we also find that the V/III ratio can affect the final roughness of the GaN film. When the V/III ratio is high, the surface of final GaN film is smooth. The present study provides the insights into GaN growth from the macroscopic and microscopic views, which may provide some suggestions on better experimental GaN preparation.

Key words: GaN growth, computational fluid dynamics, molecular dynamics

中图分类号: (III-V semiconductors)

78.55.Cr

02.70.Ns (Molecular dynamics and particle methods)

周安, 修向前, 张荣, 谢自力, 华雪梅, 刘斌, 韩平, 顾书林, 施毅, 郑有炓. Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study[J]. Chin. Phys. B, 2013, 22(1): 17801-017801.

Zhou An (周安), Xiu Xiang-Qian (修向前), Zhang Rong (张荣), Xie Zi-Li (谢自力), Hua Xue-Mei (华雪梅), Liu Bin (刘斌), Han Ping (韩平), Gu Shu-Lin (顾书林), Shi Yi (施毅), Zheng You-Dou (郑有炓). Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study[J]. Chin. Phys. B, 2013, 22(1): 17801-017801.

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Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

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