Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

doi:10.1088/1674-1056/21/7/077401

中国物理B ›› 2012, Vol. 21 ›› Issue (7): 77401-077401.doi: 10.1088/1674-1056/21/7/077401

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

张伟君, 何世坤, 李博宏, 程飞, 许兵, 温振超, 曹文会, 肖宏, 韩秀峰, 赵士平, 邱祥冈

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-02-27 修回日期:2012-04-11 出版日期:2012-06-01 发布日期:2012-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2009CB929100, 2011CBA00107, and 2012CB921302) and the National Science Foundation of China (Grant Nos. 10974241 and 11104335).

Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2012-02-27 Revised:2012-04-11 Online:2012-06-01 Published:2012-06-01
Contact: Qiu Xiang-Gang E-mail:xgqiu@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2009CB929100, 2011CBA00107, and 2012CB921302) and the National Science Foundation of China (Grant Nos. 10974241 and 11104335).

摘要/Abstract

摘要： Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots (holes) is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.

关键词: magnetoresistance, caging effect, rectangular arrays of antidots

Abstract: Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots (holes) is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.

Key words: magnetoresistance, caging effect, rectangular arrays of antidots

中图分类号: (Transport properties)

74.25.F-

74.25.Uv (Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)) 74.78.Na (Mesoscopic and nanoscale systems)

张伟君, 何世坤, 李博宏, 程飞, 许兵, 温振超, 曹文会, 肖宏, 韩秀峰, 赵士平, 邱祥冈 . Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots[J]. 中国物理B, 2012, 21(7): 77401-077401.

Zhang Wei-Jun(张伟君), He Shi-Kun(何世坤), Li Bo-Hong(李博宏), Cheng Fei(程飞), Xu Bing(许兵), Wen Zhen-Chao(温振超), Cao Wen-Hui(曹文会), Xiao Hong(肖宏), Han Xiu-Feng(韩秀峰), Zhao Shi-Ping(赵士平), and Qiu Xiang-Gang(邱祥冈) . Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots[J]. Chin. Phys. B, 2012, 21(7): 77401-077401.

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Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

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