中国物理B ›› 2012, Vol. 21 ›› Issue (7): 77304-077304.doi: 10.1088/1674-1056/21/7/077304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

杨丽媛a, 薛晓咏a, 张凯a, 郑雪峰a, 马晓华a b, 郝跃a   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-11-03 修回日期:2011-12-02 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique

Yang Li-Yuan(杨丽媛)a)†, Xue Xiao-Yong(薛晓咏) a), Zhang Kai(张凯)a) Zheng Xue-Feng(郑雪峰)a), Ma Xiao-Hua(马晓华) a)b), and Hao Yue(郝跃)a)   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2011-11-03 Revised:2011-12-02 Online:2012-06-01 Published:2012-06-01
  • Contact: Yang Li-Yuan E-mail:gezhistudent@163.com
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K50510250006).

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摘要： Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

关键词: AlGaN/GaN high electron mobility transistors, Raman spectroscopy, temperature

Abstract: Self-heating in multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of AlGaN/GaN HEMT is estimated from the calibration curve of passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1 ℃ is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.

Key words: AlGaN/GaN high electron mobility transistors, Raman spectroscopy, temperature

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
85.30.Tv (Field effect devices) 78.30.Fs (III-V and II-VI semiconductors)