中国物理B ›› 2012, Vol. 21 ›› Issue (6): 66802-066802.doi: 10.1088/1674-1056/21/6/066802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

修显武a, 赵文静b   

  1. a. School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
    b. Jinan No.3 Vocational School, Jinan 250001, China
  • 收稿日期:2011-11-01 修回日期:2011-12-25 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the Science Foundation of the Education Commission of Shandong Province, China (Grant No. J10LA04).

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Xiu Xian-Wu(修显武)a)† and Zhao Wen-Jing(赵文静)b)   

  1. a. School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
    b. Jinan No.3 Vocational School, Jinan 250001, China
  • Received:2011-11-01 Revised:2011-12-25 Online:2012-05-01 Published:2012-05-01
  • Contact: Xiu Xian-Wu E-mail:xwxiu@sdnu.edu.cn
  • Supported by:
    Project supported by the Science Foundation of the Education Commission of Shandong Province, China (Grant No. J10LA04).

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摘要： Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature. The MoO3 content in the target varies from 0 to 5 wt%, and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. The resistivity first decreases and then increases with the increase in MoO3 content. The lowest resistivity achieved is 9.2 × 10-4 Ω·cm, with a high Hall mobility of 30 cm2·V-1·s-1 and a carrier concentration of 2.3 × 1020 cm-3 at an MoO3 content of 2 wt%. The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.

关键词: molybdenum oxide, zinc oxide, magnetron sputtering, transparent conducting oxides

Abstract: Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency (RF) magnetron sputtering at ambient temperature. The MoO3 content in the target varies from 0 to 5 wt%, and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis. The resistivity first decreases and then increases with the increase in MoO3 content. The lowest resistivity achieved is 9.2 × 10-4 Ω·cm, with a high Hall mobility of 30 cm2·V-1·s-1 and a carrier concentration of 2.3 × 1020 cm-3 at an MoO3 content of 2 wt%. The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.

Key words: molybdenum oxide, zinc oxide, magnetron sputtering, transparent conducting oxides

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
73.61.Ga (II-VI semiconductors) 78.30.Fs (III-V and II-VI semiconductors)