中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107802-107802.doi: 10.1088/1674-1056/21/10/107802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

傅广生, 王新占, 路万兵, 戴万雷, 李兴阔, 于威   

  1. College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2012-03-21 修回日期:2012-05-08 出版日期:2012-09-01 发布日期:2012-09-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60878040) and the Natural Science Foundation of Hebei Province, China (Grant Nos. F2012201007 and F2012201042).

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Fu Guang-Sheng (傅广生), Wang Xin-Zhan (王新占), Lu Wan-Bing (路万兵), Dai Wan-Lei (戴万雷), Li Xing-Kuo (李兴阔), Yu Wei (于威)   

  1. College of Physics Science and Technology, Hebei University, Baoding 071002, China
  • Received:2012-03-21 Revised:2012-05-08 Online:2012-09-01 Published:2012-09-01
  • Contact: Wang Xin-Zhan E-mail:xinzhan_wang@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60878040) and the Natural Science Foundation of Hebei Province, China (Grant Nos. F2012201007 and F2012201042).

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摘要： Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique, and optical emissions from the near-infrared to the visible are obtained. The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content, and the photoluminescence (PL) peak shifts from 1.51 eV to 2.16 eV. The band tail state PL mechanism is confirmed by analysing the optical band gap, PL intensity, the Stocks shift of the PL, and the Urbach energy of the film. The PL decay times of the samples are in the nanosecond scale, and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

关键词: amorphous silicon carbide, band tail state photoluminescence, time-resolved photoluminescence

Abstract: Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique, and optical emissions from the near-infrared to the visible are obtained. The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content, and the photoluminescence (PL) peak shifts from 1.51 eV to 2.16 eV. The band tail state PL mechanism is confirmed by analysing the optical band gap, PL intensity, the Stocks shift of the PL, and the Urbach energy of the film. The PL decay times of the samples are in the nanosecond scale, and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

Key words: amorphous silicon carbide, band tail state photoluminescence, time-resolved photoluminescence

中图分类号:  (Amorphous semiconductors; glasses)

  • 78.66.Jg
78.55.-m (Photoluminescence, properties and materials) 78.47.jd (Time resolved luminescence)