中国物理B ›› 2011, Vol. 20 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/20/9/097302

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Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

杨丽媛1, 焦莎莎1, 张进成1, 郝跃1, 马晓华2, 马平2, 焦颖2, 马骥刚2, 贺强2   

  1. (1)Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-03-29 修回日期:2011-05-05 出版日期:2011-09-15 发布日期:2011-09-15

Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Ma Xiao-Hua(马晓华)a)b)†, Ma Ping(马平)a), Jiao Ying(焦颖)a), Yang Li-Yuan(杨丽媛)b), Ma Ji-Gang(马骥刚)a), He Qiang(贺强)a), Jiao Sha-Sha(焦莎莎)b), Zhang Jin-Cheng(张进成) b), and Hao Yue(郝跃)b)   

  1. a School of Technical Physics, Xidian University, Xi'an 710071, China; b Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2011-03-29 Revised:2011-05-05 Online:2011-09-15 Published:2011-09-15

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摘要： Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure, which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface. While the carrier concentration reaches 1.32 × 1013 cm - 2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 104 cm2/(V·s) at 2 K. The Shubnikov—de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEG is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.

关键词: AlGaN/AlN/GaN/SiC heterostructures, two-dimensional electron gas, Shubnikov—de Haas oscillations, magnetotransport properties

Abstract: Magnetotransport measurements are carried out on the AlGaN/AlN/GaN in an SiC heterostructure, which demonstrates the existence of the high-quality two-dimensional electron gas (2DGE) at the AlN/GaN interface. While the carrier concentration reaches 1.32 × 1013 cm - 2 and stays relatively unchanged with the decreasing temperature, the mobility of the 2DEG increases to 1.21 × 104 cm2/(V·s) at 2 K. The Shubnikov—de Haas (SdH) oscillations are observed in a magnetic field as low as 2.5 T at 2 K. By the measurements and the analyses of the temperature-dependent SdH oscillations, the effective mass of the 2DEG is determined. The ratio of the transport lifetime to the quantum scattering time is 9 in our sample, indicating that small-angle scattering is predominant.

Key words: AlGaN/AlN/GaN/SiC heterostructures, two-dimensional electron gas, Shubnikov—de Haas oscillations, magnetotransport properties

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 75.47.-m (Magnetotransport phenomena; materials for magnetotransport)