Measuring thermoelectric property of nano-heterostructure

doi:10.1088/1674-1056/20/10/107301

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/20/10/107301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Measuring thermoelectric property of nano-heterostructure

路红亮, 张晨栋, 蔡金明, 高敏, 邹强, 郭海明, 高鸿钧

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2011-05-06 修回日期:2011-05-20 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60976089) and the National Basic Research Program of China (Grant Nos. 2007CB936802 and 2009CB929103).

Measuring thermoelectric property of nano-heterostructure

Lu Hong-Liang(路红亮), Zhang Chen-Dong(张晨栋), Cai Jin-Ming(蔡金明), Gao Min(高敏), Zou Qiang(邹强), Guo Hai-Ming(郭海明), and Gao Hong-Jun(高鸿钧)^†

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2011-05-06 Revised:2011-05-20 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60976089) and the National Basic Research Program of China (Grant Nos. 2007CB936802 and 2009CB929103).

摘要/Abstract

摘要： A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the it in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current-voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of μV/K is obtained in graphene epitaxially grown on Ru (0001) substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru (0001) substrate.

Abstract: A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the it in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current-voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of μV/K is obtained in graphene epitaxially grown on Ru (0001) substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru (0001) substrate.

Key words: thermoelectric property, four-probe scanning tunneling microscope, graphene, nano-heterostructure

中图分类号: (Thermoelectric effects)

73.50.Lw

81.05.ue (Graphene) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))

路红亮, 张晨栋, 蔡金明, 高敏, 邹强, 郭海明, 高鸿钧. Measuring thermoelectric property of nano-heterostructure[J]. 中国物理B, 2011, 20(10): 107301-107301.

Lu Hong-Liang(路红亮), Zhang Chen-Dong(张晨栋), Cai Jin-Ming(蔡金明), Gao Min(高敏), Zou Qiang(邹强), Guo Hai-Ming(郭海明), and Gao Hong-Jun(高鸿钧) . Measuring thermoelectric property of nano-heterostructure[J]. Chin. Phys. B, 2011, 20(10): 107301-107301.

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Measuring thermoelectric property of nano-heterostructure

Measuring thermoelectric property of nano-heterostructure

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