中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127802-127802.doi: 10.1088/1674-1056/19/12/127802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optical characteristic and gap states distribution of amorphous SnO2:(Zn,In) film

张治国   

  1. Institute of Functional Material, Quanzhou Normal University, Quanzhou 362000, China
  • 收稿日期:2010-02-04 修回日期:2010-07-13 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported by the Program A for Science and Technology of Education Bureau of Fujian Province of China (Grant No. JA08210).

Optical characteristic and gap states distribution of amorphous SnO2:(Zn,In) film

Zhang Zhi-Guo(张治国)†   

  1. Institute of Functional Material, Quanzhou Normal University, Quanzhou 362000, China
  • Received:2010-02-04 Revised:2010-07-13 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported by the Program A for Science and Technology of Education Bureau of Fujian Province of China (Grant No. JA08210).

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摘要： In this paper the fabrication technique of amorphous SnO2:(Zn,In) film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.

Abstract: In this paper the fabrication technique of amorphous SnO2:(Zn,In) film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.

Key words: transmittance, amorphous film, gap states distribution

中图分类号:  (Amorphous semiconductors, metals, and alloys)

  • 61.43.Dq
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.66.Li (Other semiconductors)