中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127802-127802.doi: 10.1088/1674-1056/19/12/127802
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张治国
Zhang Zhi-Guo(张治国)†
摘要: In this paper the fabrication technique of amorphous SnO2:(Zn,In) film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.
中图分类号: (Amorphous semiconductors, metals, and alloys)