Coherence destruction of tunneling in a quantum-dot molecule with bias

doi:10.1088/1674-1056/19/10/107202

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107202-107202.doi: 10.1088/1674-1056/19/10/107202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Coherence destruction of tunneling in a quantum-dot molecule with bias

钟光辉¹, 王立民²

(1)Department of Physics, Hebei Normal University, Shijiazhuang 050016, China; (2)Institute of Applied Physics and Computational Mathematics, Beijing 100088, China

收稿日期:2010-02-01 修回日期:2010-03-19 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by Natural Science Foundation of Hebei Normal University for Young Teachers (Grant No. L2009Q07).

Coherence destruction of tunneling in a quantum-dot molecule with bias

Zhong Guang-Hui(钟光辉)^a) and Wang Li-Min(王立民)^b)†ger

^a Department of Physics, Hebei Normal University, Shijiazhuang 050016, China; ^b Institute of Applied Physics and Computational Mathematics, Beijing 100088, China

Received:2010-02-01 Revised:2010-03-19 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by Natural Science Foundation of Hebei Normal University for Young Teachers (Grant No. L2009Q07).

摘要/Abstract

摘要： This paper studies the constraint conditions for coherence destruction in tunneling by using perturbation theory and numerical simulation for an AC-field with bias and Coulomb interaction between electrons in a quantum dot molecule. Such conditions can be described by using the roots of a Bessel function J_n(x), where n is determined by both the bias and the Coulomb interactions, and x is the ratio of the amplitude to the frequency of the AC-field. Under such conditions, a coherent suppression of tunneling occurs between localized electronic states, which results from the dynamical localization phenomenon. All the conditions are verified with numerical simulations.

Abstract: This paper studies the constraint conditions for coherence destruction in tunneling by using perturbation theory and numerical simulation for an AC-field with bias and Coulomb interaction between electrons in a quantum dot molecule. Such conditions can be described by using the roots of a Bessel function J_n(x), where n is determined by both the bias and the Coulomb interactions, and x is the ratio of the amplitude to the frequency of the AC-field. Under such conditions, a coherent suppression of tunneling occurs between localized electronic states, which results from the dynamical localization phenomenon. All the conditions are verified with numerical simulations.

Key words: dynamic localization, Floquet state, constraint conditions

中图分类号: (Methods of electronic structure calculations)

71.15.-m

73.20.Jc (Delocalization processes) 73.21.La (Quantum dots) 73.40.Gk (Tunneling) 73.63.Kv (Quantum dots)

钟光辉, 王立民. Coherence destruction of tunneling in a quantum-dot molecule with bias[J]. 中国物理B, 2010, 19(10): 107202-107202.

Zhong Guang-Hui(钟光辉) and Wang Li-Min(王立民). Coherence destruction of tunneling in a quantum-dot molecule with bias[J]. Chin. Phys. B, 2010, 19(10): 107202-107202.

参考文献 22

[1]	Kohler S, Lehmann J and Hänggi P 2005 Phys. Rep. 406 379 and the references cited therein.
[2]	Creffield C E 2009 Phys. Rev. A 79 063612
[3]	Horodecki R, Horodecki P, Horodecki M and Horodecki K 2009 Rev. Mod. Phys. 81 865
[4]	Loss D and DiVincenzo D P 1998 Phys. Rev. A 57 120
[5]	Grossmann F, Dittrich T, Jung P and Hänggi P 1991 Phys. Rev. Lett. 67 516
[6]	Holthaus M 1992 Z. Phys. B: Condens. Matter 59 251
[7]	Grossmann F and Hänggi P 1992 Europhys. Lett. 18 571
[8]	Oosterkamp T H, Fujisawa T, van der Wiel W G, Ishibashi K, Hijman R V, Tarucha S and Kouwenhoven L P 1998 Nature 395 873
[9]	Zhang Z Y and Xiong S J 1998 Phys. Rev. E 57 3668
[10]	Zhang P and Zhao X G 2000 Phys. Lett. A 271 419
[11]	Zhang P, Xue Q K, Zhao X G and Xie X C 2002 Phys. Rev. A 66 022117
[12]	Creffield C E and Platero G 2002 Phys. Rev. B 65 113304
[13]	Creffield C E and Platero G 2002 Phys. Rev. B 66 235303
[14]	Paspalakis E 2003 Phys. Rev. B 67 233306
[15]	Grifoni M and Hänggi P 1998 Phys. Rep. 304 229
[16]	Creffield C E 2009 Phys. Rev. Lett. 99 110501
[17]	Lehmann J, Camalet S, Kohler S and Hänggi P 2003 Chem. Phys. Lett. 368 282
[18]	Burdov V A 2001 Phys. Solid State 43 1152
[19]	von Neumann J and Wigner E 1929 Physica Z 30 467
[20]	Wang L F and Yang G C 2009 Chin. Phys. B 18 2523
[21]	Wang H and Zhao X G 1995 J. Phys.: Condens. Matter 7 L89
[22]	Liu C S, Ma B K and Wang L M 2003 Acta Phys. Sin. 52 2020 (in Chinese) endfootnotesize

Coherence destruction of tunneling in a quantum-dot molecule with bias

Coherence destruction of tunneling in a quantum-dot molecule with bias

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