中国物理B ›› 2009, Vol. 18 ›› Issue (3): 1266-1269.doi: 10.1088/1674-1056/18/3/071

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Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films

于广华1, 姜勇1, 刘泉林2   

  1. (1)State Key Laboratory for Advanced Metals and Materials, School of Materials Science & Engineering, University of Science and Technology Beijing, Beijing 100083, China; (2)State Key Laboratory for Advanced Metals and Materials, School of Materials Science & Engineering, University of Science and Technology Beijing, Beijing 100083, China;Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, T
  • 收稿日期:2008-07-25 修回日期:2008-08-18 出版日期:2009-03-20 发布日期:2009-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50672007), the NCET-06-0082, and the MOST 973 Program of China (Grant No 2007CB936202).

Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films

Liu Quan-Lin(刘泉林)a)b)†, Yu Guang-Hua(于广华)a), and Jiang Yong (姜勇)a)   

  1. a State Key Laboratory for Advanced Metals and Materials, School of Materials Science & Engineering, University of Science and Technology Beijing, Beijing 100083, China; b Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
  • Received:2008-07-25 Revised:2008-08-18 Online:2009-03-20 Published:2009-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50672007), the NCET-06-0082, and the MOST 973 Program of China (Grant No 2007CB936202).

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摘要： This paper investigates the effect of growth temperature on morphology, structure and photoluminescence (PL) of Tb-doped boron nitride (BN) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb3+ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb3+ ions increase with the increase of temperature in the range of 473--1273 K.

关键词: boron nitride, rare earth doped, photoluminescence, thin film growth

Abstract: This paper investigates the effect of growth temperature on morphology, structure and photoluminescence (PL) of Tb-doped boron nitride (BN) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb3+ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb3+ ions increase with the increase of temperature in the range of 473--1273 K.

Key words: boron nitride, rare earth doped, photoluminescence, thin film growth

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd
78.55.Cr (III-V semiconductors) 78.66.Fd (III-V semiconductors) 68.55.-a (Thin film structure and morphology) 61.43.Dq (Amorphous semiconductors, metals, and alloys) 68.55.A- (Nucleation and growth)