中国物理B ›› 2009, Vol. 18 ›› Issue (2): 768-772.doi: 10.1088/1674-1056/18/2/059

• • 上一篇    下一篇

Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

许高博, 徐秋霞   

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2008-04-09 修回日期:2008-08-14 出版日期:2009-02-20 发布日期:2009-02-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB302704) and the National Natural Science Foundation of China (Grant No 60776030).

Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞)   

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2008-04-09 Revised:2008-08-14 Online:2009-02-20 Published:2009-02-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB302704) and the National Natural Science Foundation of China (Grant No 60776030).

摘要: This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO2 buffer layer. The gate dielectric with 10? (1?= 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielectric constant (k=14) and low gate-leakage current (Ig=1.9×10-3A/cm2 @Vg=Vfb-1V for EOT of 10?). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.

关键词: HfSiON, high-k gate dielectric, sputtering, leakage current

Abstract: This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxynitride (HfSiON) on ultrathin SiO$_{2}$ buffer layer. The gate dielectric with 10 Å (1 Å = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000${^\circ}$C, excellent interface properties, high dielectric constant ($k=14$) and low gate-leakage current ($I_{\rm g}=1.9\times 10^{ - 3}$ A/cm$^{2} @V_{\rm g}=V_{\rm fb}-1$ V for EOT of 10 {\AA}). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3 eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.

Key words: HfSiON, high-k gate dielectric, sputtering, leakage current

中图分类号: 

  • 77.55.+f
77.22.Ch (Permittivity (dielectric function)) 81.15.Cd (Deposition by sputtering) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.-c (Electronic transport in interface structures) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)