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Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Effects of preparation parameters on growth and properties of β-Ga2O3 film[J]. 中国物理B, 2023, 32(1): 17301-017301. |
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Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401. |
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Le Wang(王乐), Zhao-Xuan Jing(荆照轩), Ao-Ran Zhou(周傲然), and Shan-Dong Li(李山东). Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers[J]. 中国物理B, 2022, 31(8): 86201-086201. |
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Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇). Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering[J]. 中国物理B, 2022, 31(6): 66101-066101. |
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Dawei Ye(叶大为), Fang Ding(丁芳), Kedong Li(李克栋), Zhenhua Hu(胡振华), Ling Zhang(张凌), Xiahua Chen(陈夏华), Qing Zhang(张青), Pingan Zhao(赵平安), Tao He(贺涛), Lingyi Meng(孟令义), Kaixuan Ye(叶凯萱), Fubin Zhong(钟富彬), Yanmin Duan(段艳敏), Rui Ding(丁锐), Liang Wang(王亮), Guosheng Xu(徐国盛), Guangnan Luo(罗广南), and EAST team. Experimental investigation on divertor tungsten sputtering with neon seeding in ELMy H-mode plasma in EAST tokamak[J]. 中国物理B, 2022, 31(6): 65201-065201. |
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Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 48503-048503. |
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Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军). Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films[J]. 中国物理B, 2022, 31(4): 48103-048103. |
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Zheng Fang(方正), Liu Yang(杨柳), Yongbin Jin(靳永斌), Kaikai Liu(刘凯凯), Huiping Feng(酆辉平), Bingru Deng(邓冰如), Lingfang Zheng(郑玲芳), Changcai Cui(崔长彩), Chengbo Tian(田成波), Liqiang Xie(谢立强), Xipeng Xu(徐西鹏), and Zhanhua Wei(魏展画). Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells[J]. 中国物理B, 2022, 31(11): 118801-118801. |
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Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃). A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications[J]. 中国物理B, 2022, 31(11): 117105-117105. |
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Xin-Lu Lin(林新璐), Wen-Xiong Zhao(赵文雄), Qiu-Chen Wu(吴秋晨), Yu-Feng Zhang(张玉峰), Hasitha Mahabaduge, and Xiang-Xin Liu(刘向鑫). Development of ZnTe film with high copper doping efficiency for solar cells[J]. 中国物理B, 2022, 31(10): 108802-108802. |
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Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films[J]. 中国物理B, 2021, 30(6): 67307-067307. |
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Xianyin Song(宋先印), Hongtao Zhou(周洪涛), and Changzhong Jiang(蒋昌忠). Cathodic shift of onset potential on TiO2 nanorod arrays with significantly enhanced visible light photoactivity via nitrogen/cobalt co-implantation[J]. 中国物理B, 2021, 30(5): 58505-058505. |
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Xia Wang(王霞), Wei-Fang Gu(古卫芳), Yong-Feng Qiao(乔永凤), Zhi-Yong Feng(冯志永), Yue-Hua An(安跃华), Shao-Hui Zhang(张少辉), and Zeng Liu(刘增). Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass[J]. 中国物理B, 2021, 30(11): 114211-114211. |
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关赫, 姜成语, 王少熙. Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor[J]. 中国物理B, 2020, 29(9): 96701-096701. |
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汪俊, 王玉全, 刘聪, 孙美玲, 王操, 尹广超, 贾福超, 牟艳男, 刘笑林, 杨海滨. Influence of CdS films synthesized by different methods on the photovoltaic performance of CdTe/CdS thin film solar cells[J]. 中国物理B, 2020, 29(9): 98802-098802. |