中国物理B ›› 2009, Vol. 18 ›› Issue (11): 5044-5046.doi: 10.1088/1674-1056/18/11/072
曹文会, 于海峰, 田野, 于洪伟, 任育峰, 陈赓华, 赵士平
Cao Wen-Hui(曹文会), Yu Hai-Feng(于海峰), Tian Ye (田野), Yu Hong-Wei(于洪伟),Ren Yu-Feng (任育峰), Chen Geng-Hua (陈赓华),andZhao Shi-Ping (赵士平)†
摘要: Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to Jc ranging from 100~A/cm2 to above 2000 A/cm2. Jc shows a familiar linear dependence on P×t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.
中图分类号: (Critical currents)