中国物理B ›› 2009, Vol. 18 ›› Issue (1): 246-250.doi: 10.1088/1674-1056/18/1/040

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

李炳生, 张崇宏, 杨义涛, 周丽宏, 张洪华   

  1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • 收稿日期:2008-06-05 修回日期:2008-08-08 出版日期:2009-01-20 发布日期:2009-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10575124).

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Li Bing-Sheng(李炳生)†, Zhang Chong-Hong(张崇宏), Yang Yi-Tao(杨义涛), Zhou Li-Hong(周丽宏), and Zhang Hong-Hua(张洪华)   

  1. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • Received:2008-06-05 Revised:2008-08-08 Online:2009-01-20 Published:2009-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10575124).

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摘要： Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Abstract: Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Key words: helium-ion irradiation, defect activation energy, charge-sensitive deep level transient spectroscopy

中图分类号:  (Elemental semiconductors)

  • 71.55.Cn
61.80.Jh (Ion radiation effects) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 81.40.Gh (Other heat and thermomechanical treatments)