中国物理B ›› 2008, Vol. 17 ›› Issue (3): 1070-1077.doi: 10.1088/1674-1056/17/3/053
冯顺山1, 陈国光2, 李学林3
Li Xue-Lin(李学林)a)c)†,Feng Shun-Shan(冯顺山)b), and Chen Guo-Guang(陈国光)a)
摘要: Non-volatile memory based on TiN nanocrystal (TiN--NC) charge storage nodes embedded in SiO$_{2}$ has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN--NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5\,nm is confirmed by transmission electron microscopy and x-ray diffraction. x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiN$_{x}$O$_{y}$/SiON oxide between TiN--NC and SiO$_{2}$, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5\,V and an endurance cycle throughout 10$^{5}$. Its charging mechanism, which is interpreted from the analysis of programming speed (d$V_{\rm th}$/d$t$) and the gate leakage versus voltage characteristics ($I_{\rm g}$ vs $V_{\rm g})$, has been explained by direct tunnelling for tunnel oxide and Fowler--Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler--Nordheim tunnelling for both the oxides at programming voltages higher than 9\,V.
中图分类号: (Field effect devices)