A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

doi:10.1088/1009-1963/9/8/011

中国物理B ›› 2000, Vol. 9 ›› Issue (8): 611-614.doi: 10.1088/1009-1963/9/8/011

A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

王光瑞¹, 陈式刚¹, 许海波²

(1)Center for Nonlinear Studies, Institute of Applied Physics and Computational mathematics, Beijing 100088; (2)Graduate School, China Academy of Engineering Physics, Beijing 100088; Center for Nonlinear Studies, Institute of Applied Physics and Computational mathematics, Beijing 100088

收稿日期:2000-01-11 修回日期:2000-03-02 出版日期:2000-08-15 发布日期:2005-06-10
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 19774049), and the Science Foundation of China Academy of Engineering Physics (Grant Nos. 970116 and 980112).

A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

Xu Hai-bo (许海波)^ab, Wang Guang-rui (王光瑞)^b, Chen Shi-gang (陈式刚)^b

^a Graduate School, China Academy of Engineering Physics, Beijing 100088; ^bCenter for Nonlinear Studies, Institute of Applied Physics and Computational mathematics, Beijing 100088

Received:2000-01-11 Revised:2000-03-02 Online:2000-08-15 Published:2005-06-10
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 19774049), and the Science Foundation of China Academy of Engineering Physics (Grant Nos. 970116 and 980112).

摘要/Abstract

摘要： We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).

Abstract: We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).

Key words: Frenkel-Kontorova model, vacancy bond, gradient method

中图分类号: (Structure of clean surfaces (and surface reconstruction))

68.35.B-

68.43.Mn (Adsorption kinetics ?) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)

许海波, 王光瑞, 陈式刚. A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES[J]. 中国物理B, 2000, 9(8): 611-614.

Xu Hai-bo (许海波), Wang Guang-rui (王光瑞), Chen Shi-gang (陈式刚). A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES[J]. Chinese Physics, 2000, 9(8): 611-614.

[1]	孙敏, 王崇愚, 刘吉平. Multiscale energy density algorithm and application to surface structure of Ni matrix of superalloy[J]. 中国物理B, 2018, 27(9): 97105-097105.
[2]	任俊海, 包德亮, 董立, 高蕾, 武荣庭, 闫凌昊, 王爱伟, 严佳浩, 王业亮, 杜世萱, 郇庆, 高鸿钧. Thermo-controllable self-assembled structures of single-layer 4, 4"-diamino-p-terphenyl molecules on Au (110)[J]. 中国物理B, 2017, 26(8): 86801-086801.
[3]	Nisar Ali, Shazia Bashir, Umm-i-Kalsoom, M. Shahid Rafique, Narjis Begum, Wolfgang Husinsky, Ali Ajami, Chandra S. R. Natahala. Femtosecond laser induced nanostructuring of zirconium in liquid confined environment[J]. 中国物理B, 2017, 26(1): 15204-015204.
[4]	赵艳, 高伟, 徐博, 李英爱, 李红东, 顾广瑞, 殷红. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas[J]. 中国物理B, 2016, 25(10): 106801-106801.
[5]	秦玉香, 刘成, 谢威威, 崔梦阳. Controllable synthesis of ultrathin vanadium oxide nanobelts via an EDTA-mediated hydrothermal process[J]. 中国物理B, 2016, 25(2): 27307-027307.
[6]	贺小敏, 陈治明, 蒲红斌, 李连碧, 黄磊. First-principles calculations on Si (220) located 6H-SiC (1010) surface with different stacking sites[J]. , 2014, 23(10): 106802-106802.
[7]	王明娥, 马国佳, 董闯, 巩水利. Preparation and characterization of thick cubic boron nitride films[J]. 中国物理B, 2014, 23(6): 66805-066805.
[8]	王波, 宿世臣, 何苗, 陈弘, 吴汶波, 张伟伟, 王巧, 陈虞龙, 高优, 张力, 朱克宝, 雷严. Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching[J]. 中国物理B, 2013, 22(10): 106802-106802.
[9]	张加宏, 李敏, 顾芳, 刘清惓. Influences of surface effects and large deformation on the resonant properties of ultrathin silicon nanocantilevers[J]. 中国物理B, 2012, 21(1): 16203-016203.
[10]	汤富领, 岳瑞, 路文江. Surface reconstruction on stishovite SiO₂, HfO₂ and rutile TiO₂ (001)[J]. 中国物理B, 2011, 20(2): 26801-026801.
[11]	许晟瑞, 郝跃, 张进成, 周小伟, 曹艳荣, 欧新秀, 毛维, 杜大超, 王昊. The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition[J]. 中国物理B, 2010, 19(10): 107204-107204.
[12]	李述体, 曹健兴, 范广涵, 章勇, 郑树文, 苏军. GaP layers grown on GaN with and without buffer layers[J]. 中国物理B, 2010, 19(10): 107206-107206.
[13]	徐茂杰, Jeyanthinath Mayandi, 王学森, 贾金锋, 薛其坤, 窦晓鸣. STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface[J]. 中国物理B, 2010, 19(10): 106102-106102.
[14]	公茂刚, 刘远越, 许小亮. A new model for the formation of contact angle and contact angle hysteresis[J]. 中国物理B, 2010, 19(10): 106801-106801.
[15]	朱志立, 丁艳丽, 王志永, 谷锦华, 卢景霄. Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films[J]. 中国物理B, 2010, 19(10): 106803-106803.

A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0