中国物理B ›› 2007, Vol. 16 ›› Issue (2): 524-528.doi: 10.1088/1009-1963/16/2/039

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Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment

梁荣庆1, 钱晓梅2, 卫永霞2, 俞笑竹2, 叶超2, 宁兆元2   

  1. (1)Institute of Modern Physics, Fudan University, Shanghai 200433, China; (2)School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
  • 收稿日期:2006-07-17 修回日期:2006-08-16 出版日期:2007-02-20 发布日期:2007-02-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10575074), the Specialized Research Fund for the Doctoral Program of Higher Education of China and the Foundation of Key Laboratory of Thin Films, Jiangsu Province, China.

Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment

Qian Xiao-Mei(钱晓梅)a), Wei Yong-Xia(卫永霞)a), Yu Xiao-Zhu(俞笑竹)a), Ye Chao(叶超)a), Ning Zhao-Yuan(宁兆元)a), and Liang Rong-Qing(梁荣庆)b)   

  1. a School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China; b Institute of Modern Physics, Fudan University, Shanghai 200433, China
  • Received:2006-07-17 Revised:2006-08-16 Online:2007-02-20 Published:2007-02-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10575074), the Specialized Research Fund for the Doctoral Program of Higher Education of China and the Foundation of Key Laboratory of Thin Films, Jiangsu Province, China.

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摘要： This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant (low-k) film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. By the Fourier transform infrared (FTIR) analysis on the bonding configurations of SiCOH films treated by O2 plasma, it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonds through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.

关键词: porous SiCOH film, O2 plasma treatment, electrical property

Abstract: This paper investigates the effect of O2 plasma treatment on the electric property of Cu/SiCOH low dielectric constant (low-k) film integrated structure. The results show that the leakage current of Cu/SiCOH low-k integrated structure can be reduced obviously at the expense of a slight increase in dielectric constant k of SiCOH films. By the Fourier transform infrared (FTIR) analysis on the bonding configurations of SiCOH films treated by O2 plasma, it is found that the decrease of leakage current is related to the increase of Si-O cages originating from the linkage of Si dangling bonds through O, which makes the open pores sealed and reduces the diffusion of Cu to pores.

Key words: porous SiCOH film, O2 plasma treatment, electrical property

中图分类号:  (Permittivity (dielectric function))

  • 77.22.Ch
52.77.-j (Plasma applications) 71.55.-i (Impurity and defect levels) 78.30.Hv (Other nonmetallic inorganics)