中国物理B ›› 2005, Vol. 14 ›› Issue (3): 565-570.doi: 10.1088/1009-1963/14/3/025

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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

刘忠立1, 张国强1, 李宁1, 范楷1, 郑中山2, 张恩霞3, 易万兵3, 陈猛3, 王曦3   

  1. (1)Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Department of Physics, Jinan University, Jinan 250022, China; (3)Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2004-07-09 修回日期:2004-08-04 出版日期:2005-03-02 发布日期:2005-03-02

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

Zheng Zhong-Shan (郑中山)ac, Liu Zhong-Li (刘忠立)a, Zhang Guo-Qiang (张国强)a, Li Ning (李宁)a, Fan Kai (范楷)a, Zhang En-Xia (张恩霞)b, Yi Wan-Bing (易万兵)b, Chen Meng (陈猛)b, Wang Xi (王曦)b   

  1. a Microelectronics R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, Chinac Department of Physics, Jinan University, Jinan 250022, China
  • Received:2004-07-09 Revised:2004-08-04 Online:2005-03-02 Published:2005-03-02

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摘要： The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8×1015, 2×1016 and 1×1017cm-2) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5×105rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×1015cm-2 is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2×1016 and 1×1017cm-2, for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

关键词: SOIPMOSFET, radiation hardness, nitrogen implantation, threshold voltage shift

Abstract: The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8×1015, 2×1016 and 1×1017cm-2) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5×105rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8×1015cm-2 is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2×1016 and 1×1017cm-2, for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Key words: SOIPMOSFET, radiation hardness, nitrogen implantation, threshold voltage shift

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.40.Ry (Impurity doping, diffusion and ion implantation technology) 61.72.uf (Ge and Si) 85.30.De (Semiconductor-device characterization, design, and modeling)