中国物理B ›› 2004, Vol. 13 ›› Issue (4): 561-563.doi: 10.1088/1009-1963/13/4/027

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Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

季振国, 赵士超, 向因, 宋永梁, 叶志镇   

  1. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2003-06-30 修回日期:2003-11-12 出版日期:2004-04-22 发布日期:2004-04-20
  • 基金资助:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No G2000 0683-06), and the Major Programme of the National Natural Science Foundation of China (Grand No 90201038).

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Ji Zhen-Guo (季振国), Zhao Shi-Chao (赵士超), Xiang Yin (向因), Song Yong-Liang (宋永梁), Ye Zhi-Zhen (叶志镇)   

  1. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China
  • Received:2003-06-30 Revised:2003-11-12 Online:2004-04-22 Published:2004-04-20
  • Supported by:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No G2000 0683-06), and the Major Programme of the National Natural Science Foundation of China (Grand No 90201038).

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摘要： Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.

关键词: zinc silicate, sol-gel, solid-phase reaction, photoluminescence

Abstract: Terbium-doped Zn$_2$SiO$_4$ films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO$_2$. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn$_2$SiO$_4$ in wellimite structure. Photoluminescence measurements of the Tb-doped Zn$_2$SiO$_4$ films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.

Key words: zinc silicate, sol-gel, solid-phase reaction, photoluminescence

中图分类号:  (Other solid inorganic materials)

  • 78.55.Hx
81.20.Fw (Sol-gel processing, precipitation) 78.40.Fy (Semiconductors) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.66.Li (Other semiconductors)