中国物理B ›› 2004, Vol. 13 ›› Issue (12): 2077-2081.doi: 10.1088/1009-1963/13/12/017

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Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

张颜鹏1, 卢克清2, 赵卫2, 杨延龙2, 朱香平2, 李金萍2   

  1. (1)Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China; (2)State Key Laboratory of Transient Optics Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China
  • 收稿日期:2004-03-31 修回日期:2004-05-24 出版日期:2004-12-17 发布日期:2005-03-17
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60078004), and by the Director Foundation of Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

Lu Ke-Qing (卢克清)a, Zhao Wei (赵卫)a, Yang Yan-Long (杨延龙)a, Zhu Xiang-Ping (朱香平)a, Li Jin-Ping (李金萍)a, Zhang Yan-Peng (张颜鹏)b    

  1. a State Key Laboratory of Transient Optics Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China; b Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2004-03-31 Revised:2004-05-24 Online:2004-12-17 Published:2005-03-17
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60078004), and by the Director Foundation of Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences.

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摘要： We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive－photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive－nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive－photovoltaic crystals when the external bias field is absent.

关键词: optical spatial solitons, modulation instability, photorefractive effect

Abstract: We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive－photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive－nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive－photovoltaic crystals when the external bias field is absent.

Key words: optical spatial solitons, modulation instability, photorefractive effect

中图分类号:  (Phase conjugation; photorefractive and Kerr effects)

  • 42.65.Hw
72.40.+w (Photoconduction and photovoltaic effects) 42.65.Tg (Optical solitons; nonlinear guided waves) 77.22.Jp (Dielectric breakdown and space-charge effects)