中国物理B ›› 1998, Vol. 7 ›› Issue (3): 203-208.doi: 10.1088/1004-423X/7/3/007

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OPTICAL PROPERTIES OF ZnO COMPOSITE NANOPARTICLES

王新峰1, 王振家1, 陈建新1, 王荣瑶2, 吴晓春2, 武鹏飞2, 邹炳锁2, 汪力2, 许景周2, 徐积仁2   

  1. (1)Institute of Chemistry, Academia Sinica, Beijing 100080, China; (2)Institute of Physics, Academia Sinica, Beijing 100080, China
  • 收稿日期:1997-06-27 出版日期:1998-03-20 发布日期:1998-03-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China .

OPTICAL PROPERTIES OF ZnO COMPOSITE NANOPARTICLES

WANG RONG-YAO (王荣瑶)a, WU XIAO-CHUN (吴晓春)a, WU PENG-FEI (武鹏飞)a, ZOU BING-SUO (邹炳锁)a, WANG LI (汪力)a, XU JING-ZHOU (许景周)a, XU JI-REN (徐积仁)a, WANG XIN-FENG (王新峰)b, WANG ZHEN-JIA (王振家)b, CHEN JIAN-XINb   

  1. a Institute of Physics, Academia Sinica, Beijing 100080, China; b Institute of Chemistry, Academia Sinica, Beijing 100080, China
  • Received:1997-06-27 Online:1998-03-20 Published:1998-03-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China .

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摘要： We have synthesized core/shell structure ZnO composite nanoparticles by surface chemical modification. This new composite material shows a large optical gap redshift compared with the homogeneous ZnO nanoparticles. The visible photoluminescence ranging from blue to red in color with fast decay time may be as signed to the interfacial bound-exciton-like emission.

Abstract: We have synthesized core/shell structure ZnO composite nanoparticles by surface chemical modification. This new composite material shows a large optical gap redshift compared with the homogeneous ZnO nanoparticles. The visible photoluminescence ranging from blue to red in color with fast decay time may be as signed to the interfacial bound-exciton-like emission.

中图分类号:  (Nanocrystals, nanoparticles, and nanoclusters)

  • 78.67.Bf
78.55.Et (II-VI semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 81.16.-c (Methods of micro- and nanofabrication and processing) 81.05.Dz (II-VI semiconductors)