中国物理B ›› 1998, Vol. 7 ›› Issue (12): 930-935.doi: 10.1088/1004-423X/7/12/008

• • 上一篇    

PROPERITES OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS IRRADIATED BY EXCIMER PULSE LASER

王立, 马天夫, 黄信凡, 徐俊, 李启亮, 吴状春, 陈坤基   

  1. State Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:1998-04-02 修回日期:1998-05-04 出版日期:1998-12-20 发布日期:1998-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.69890225).

PROPERITES OF HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS IRRADIATED BY EXCIMER PULSE LASER

WANG LI (王立), MA TIAN-FU (马天夫), HUANG XIN-FAN (黄信凡), XU JUN (徐俊), LI QI-LIANG (李启亮), WU ZHUANG-CHUN (吴状春), CHEN KUN-JI (陈坤基)   

  1. State Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:1998-04-02 Revised:1998-05-04 Online:1998-12-20 Published:1998-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.69890225).

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摘要： A series of hydrogenated amorphous silicon carbide film (a-SiC:H) were prepared by rf plasma-enhanced chemical vapor deposition method. The optical band gap(Eoptg) of the films can be extended to 2.6eV. The as-deposited alma were then irradiated by a KrF excimer laser. During the irradiation process, hydrogen escaped out of the films, and the structure of the films was changed from an amorphous phase to mixed phases of nanocrystallites of silicon and amorphous silicon carbide. The room-temperature dark conductivity of the laser irradiated films is 6-7 orders of magnitude larger than that of the as-deposited films, which was attributed to the modification of the conductivity mechanism resulting from the structural change.

Abstract: A series of hydrogenated amorphous silicon carbide film (a-SiC:H) were prepared by rf plasma-enhanced chemical vapor deposition method. The optical band gap(Eoptg) of the films can be extended to 2.6eV. The as-deposited alma were then irradiated by a KrF excimer laser. During the irradiation process, hydrogen escaped out of the films, and the structure of the films was changed from an amorphous phase to mixed phases of nanocrystallites of silicon and amorphous silicon carbide. The room-temperature dark conductivity of the laser irradiated films is 6-7 orders of magnitude larger than that of the as-deposited films, which was attributed to the modification of the conductivity mechanism resulting from the structural change.

中图分类号:  (Amorphous semiconductors, metals, and alloys)

  • 61.43.Dq
52.77.Dq (Plasma-based ion implantation and deposition) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.55.-a (Thin film structure and morphology) 42.55.Lt (Gas lasers including excimer and metal-vapor lasers) 61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation))