中国物理B ›› 1995, Vol. 4 ›› Issue (3): 213-218.doi: 10.1088/1004-423X/4/3/007

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INTERACTION OF OXYGEN PRECIPITATES WITH STRUCTURAL DEFECTS IN CZ Si CRYSTALS

肖治刚1, 柯俊1, 栾洪发2, 张隽3   

  1. (1)Department of Materials Physics, Beijing University of Science and Technology, Beijing 100083, China; (2)Institute of Microelectronics, Tsinghua University, Beijing 100084, China; (3)Institute of Semiconductor, Academia Sinica Beijing 100083, China
  • 收稿日期:1994-02-09 出版日期:1995-03-20 发布日期:1995-03-20

INTERACTION OF OXYGEN PRECIPITATES WITH STRUCTURAL DEFECTS IN CZ Si CRYSTALS

LUAN HONG-FA (栾洪发)a, ZHANG JUN (张隽)b, XIAO ZHI-GANG (肖治刚)c, KE JUN (柯俊)c   

  1. a Institute of Microelectronics, Tsinghua University, Beijing 100084, China ; b Institute of Semiconductor, Academia Sinica Beijing 100083, China; c Department of Materials Physics, Beijing University of Science and Technology, Beijing 100083, China
  • Received:1994-02-09 Online:1995-03-20 Published:1995-03-20

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摘要： This paper ia dealing with the interaction between oxygen precipitates and structural defects in CZ Si crystals. Different lattice defects: dislocation loops, rod-like defects and stacking faults have been observed as a consequence of oxygen precipitation. In turn, these defects also promote the nucleation and growth of the oxygen precipitates. It is shown that the dislocation dipole is more efficient than single dislocation in enhancing the oxygen precipitate formation.

Abstract: This paper ia dealing with the interaction between oxygen precipitates and structural defects in CZ Si crystals. Different lattice defects: dislocation loops, rod-like defects and stacking faults have been observed as a consequence of oxygen precipitation. In turn, these defects also promote the nucleation and growth of the oxygen precipitates. It is shown that the dislocation dipole is more efficient than single dislocation in enhancing the oxygen precipitate formation.

中图分类号:  (Phase equilibria)

  • 64.75.-g
61.72.Nn (Stacking faults and other planar or extended defects) 61.72.Lk (Linear defects: dislocations, disclinations) 81.10.Dn (Growth from solutions)