中国物理B ›› 2012, Vol. 21 ›› Issue (7): 77402-077402.doi: 10.1088/1674-1056/21/7/077402

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure

陶也了a, 左玉华a, 郑军a, 薛春来a, 成步文a, 王启明a, 徐骏b   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b School of Electrical Science and Technology, Nanjing University, Nanjing 210093, China
  • 收稿日期:2011-11-22 修回日期:2011-12-13 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61021003, 61036001, and 51072194) and the Foundation of Chinese Academy of Sciences.

Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure

Tao Ye-Liao(陶也了)a), Zuo Yu-Hua(左玉华)a)†, Zheng Jun(郑军)a), Xue Chun-Lai(薛春来)a), Cheng Bu-Wen(成步文)a), Wang Qi-Ming(王启明)a), and Xu Jun(徐骏)b)   

  1. a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b School of Electrical Science and Technology, Nanjing University, Nanjing 210093, China
  • Received:2011-11-22 Revised:2011-12-13 Online:2012-06-01 Published:2012-06-01
  • Contact: Zuo Yu-Hua E-mail:yhzuo@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61021003, 61036001, and 51072194) and the Foundation of Chinese Academy of Sciences.

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摘要： A Raman frequency upshift of nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N2 atmosphere at 1100 ℃ for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high grown temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method to tune the optical and the electronic properties of Si nanocrystals for strained engineering.

关键词: stress, Raman spectrum, silicon nanocrystal, sputtering

Abstract: A Raman frequency upshift of nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N2 atmosphere at 1100 ℃ for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high grown temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method to tune the optical and the electronic properties of Si nanocrystals for strained engineering.

Key words: stress, Raman spectrum, silicon nanocrystal, sputtering

中图分类号:  (Raman and optical spectroscopy)

  • 74.25.nd
61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))