中国物理B ›› 2017, Vol. 26 ›› Issue (2): 28503-028503.doi: 10.1088/1674-1056/26/2/028503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Javad Vahedi, Sahar Ghasab Satoory   

  1. Department of Physics, Islamic Azad University, Sari Branch, Sari, Iran
  • 收稿日期:2016-07-22 修回日期:2016-11-01 出版日期:2017-02-05 发布日期:2017-02-05
  • 通讯作者: Javad Vahedi E-mail:javahedi@gmail.com

Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Javad Vahedi, Sahar Ghasab Satoory   

  1. Department of Physics, Islamic Azad University, Sari Branch, Sari, Iran
  • Received:2016-07-22 Revised:2016-11-01 Online:2017-02-05 Published:2017-02-05
  • Contact: Javad Vahedi E-mail:javahedi@gmail.com

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摘要： Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models: (i) single electron and (ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.

关键词: spin transfer torque, Rashba interaction, ferromagnetic

Abstract: Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models: (i) single electron and (ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.

Key words: spin transfer torque, Rashba interaction, ferromagnetic

中图分类号:  (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

  • 85.75.-d
72.25.-b (Spin polarized transport) 73.40.Gk (Tunneling) 72.10.-d (Theory of electronic transport; scattering mechanisms)