中国物理B ›› 2017, Vol. 26 ›› Issue (2): 28502-028502.doi: 10.1088/1674-1056/26/2/028502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

Min Guo(郭敏), Zhi-You Guo(郭志友), Jing Huang(黄晶), Yang Liu(刘洋), Shun-Yu Yao(姚舜禹)   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;
    2 Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2016-07-21 修回日期:2016-10-29 出版日期:2017-02-05 发布日期:2017-02-05
  • 通讯作者: Zhi-You Guo E-mail:guozy@scnu.edu.cn
  • 基金资助:
    Project supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China (Grant No. 2014B010121001), the Special Funds for Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province, China (Grant No. 2014B010119004), the Science and Technology Program Project for High Conversion Efficiency and Application of Direct Driver High-end LED Chip of Guangdong Province, China (Grant No. 2013B010204065), the Special Project for Key Science and Technology of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Science and Technology Program Project in Huadu District of Guangzhou City, China (Grant No. HD15PT003).

Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

Min Guo(郭敏)1,2, Zhi-You Guo(郭志友)1,2, Jing Huang(黄晶)1, Yang Liu(刘洋)1,2, Shun-Yu Yao(姚舜禹)1   

  1. 1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;
    2 Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2016-07-21 Revised:2016-10-29 Online:2017-02-05 Published:2017-02-05
  • Contact: Zhi-You Guo E-mail:guozy@scnu.edu.cn
  • Supported by:
    Project supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China (Grant No. 2014B010121001), the Special Funds for Strategic Emerging Industries of Guangdong Province, China (Grant No. 2012A080304006), the Special Funds for the Innovation of Forefront and Key Technology of Guangdong Province, China (Grant No. 2014B010119004), the Science and Technology Program Project for High Conversion Efficiency and Application of Direct Driver High-end LED Chip of Guangdong Province, China (Grant No. 2013B010204065), the Special Project for Key Science and Technology of Zhongshan City, Guangdong Province, China (Grant No. 2014A2FC204), and the Science and Technology Program Project in Huadu District of Guangzhou City, China (Grant No. HD15PT003).

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摘要： InGaN light-emitting diodes (LEDs) with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barriers are proposed to replace the sixth and the middle five GaN barriers under the condition of removing the electron blocking layer (EBL) and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more, a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.

关键词: composition-graded barriers, light-emitting diodes, carrier distribution

Abstract: InGaN light-emitting diodes (LEDs) with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barriers are proposed to replace the sixth and the middle five GaN barriers under the condition of removing the electron blocking layer (EBL) and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more, a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.

Key words: composition-graded barriers, light-emitting diodes, carrier distribution

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)