A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

doi:10.1088/1674-1056/23/5/057504

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57504-057504.doi: 10.1088/1674-1056/23/5/057504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

A. Tataroğlu^a, A. A. Hendi^b, R. H. Alorainy^b, F. Yakuphanoğlu^c

a Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;
b Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia;
c Department of Physics, Faculty of Science, Firat University, Elaziğ, Turkey

收稿日期:2013-07-11 修回日期:2013-11-20 出版日期:2014-05-15 发布日期:2014-05-15

A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

A. Tataroğlu^a, A. A. Hendi^b, R. H. Alorainy^b, F. Yakuphanoğlu^c

a Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;
b Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia;
c Department of Physics, Faculty of Science, Firat University, Elaziğ, Turkey

Received:2013-07-11 Revised:2013-11-20 Online:2014-05-15 Published:2014-05-15
Contact: A. Tataroğlu E-mail:ademt@gazi.edu.tr
About author:75.50.Gg; 85.60.Dw; 84.37.+q; 73.30.+y

摘要/Abstract

摘要： A novel aluminum iron oxide (Al/AlFe₂O₄/p-Si) Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite (AlFe₂O₄) was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor (n) and barrier height (Φ_B0) of the photodiode. The values of n and Φ_B0 for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance (R_s) are determined using Cheung's method and Ohm's law. The values of R_s and shunt resistance (R_sh) are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.

关键词: spinel ferrite, Schottky photodiode, I-V characteristics, barrier height

Abstract: A novel aluminum iron oxide (Al/AlFe₂O₄/p-Si) Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite (AlFe₂O₄) was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor (n) and barrier height (Φ_B0) of the photodiode. The values of n and Φ_B0 for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance (R_s) are determined using Cheung's method and Ohm's law. The values of R_s and shunt resistance (R_sh) are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.

Key words: spinel ferrite, Schottky photodiode, I-V characteristics, barrier height

中图分类号: (Ferrimagnetics)

75.50.Gg

85.60.Dw (Photodiodes; phototransistors; photoresistors) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu. A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method[J]. 中国物理B, 2014, 23(5): 57504-057504.

A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu. A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method[J]. Chin. Phys. B, 2014, 23(5): 57504-057504.

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A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method

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