AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

doi:10.1088/1674-1056/23/2/027301

中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27301-027301.doi: 10.1088/1674-1056/23/2/027301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

仇洪波^{a b}, 李惠琪^a, 刘邦武^b, 张祥^b, 沈泽南^b

a School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China;
b Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2013-08-01 修回日期:2013-08-27 出版日期:2013-12-12 发布日期:2013-12-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High-Tech R & D Program of China (Grant No. 2012AA052401).

AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

Qiu Hong-Bo (仇洪波)^{a b}, Li Hui-Qi (李惠琪)^a, Liu Bang-Wu (刘邦武)^b, Zhang Xiang (张祥)^b, Shen Ze-Nan (沈泽南)^b

a School of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China;
b Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2013-08-01 Revised:2013-08-27 Online:2013-12-12 Published:2013-12-12
Contact: Liu Bang-Wu E-mail:liubangwu@ime.ac.cn
About author:73.40.Lq; 88.40.H-; 88.40.jj
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61106060), the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y2YF028001), and the National High-Tech R & D Program of China (Grant No. 2012AA052401).

摘要/Abstract

摘要： The influence of atomic layer deposition parameters on the negative charge density in AlO_x film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10¹² cm^-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlO_x passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

关键词: AlO_x, atomic layer deposition, p-type, negative charge density, solar cell analyzing software

Abstract: The influence of atomic layer deposition parameters on the negative charge density in AlO_x film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10¹² cm^-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software (PC1D). With AlO_x passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

Key words: AlO_x, atomic layer deposition, p-type, negative charge density, solar cell analyzing software

中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Lq

88.40.H- (Solar cells (photovoltaics)) 88.40.jj (Silicon solar cells)

仇洪波, 李惠琪, 刘邦武, 张祥, 沈泽南. AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell[J]. 中国物理B, 2014, 23(2): 27301-027301.

Qiu Hong-Bo (仇洪波), Li Hui-Qi (李惠琪), Liu Bang-Wu (刘邦武), Zhang Xiang (张祥), Shen Ze-Nan (沈泽南). AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell[J]. Chin. Phys. B, 2014, 23(2): 27301-027301.

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AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

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