›› 2014, Vol. 23 ›› Issue (12): 128504-128504.doi: 10.1088/1674-1056/23/12/128504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

陈湛旭a b, 万巍a, 张佰君b, 何影记a, 金崇君b   

  1. a School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
    b State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2014-06-03 修回日期:2014-09-10 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, 11174061, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, the National Basic Research Program of China (Grant No. 2010CB923200), and the Natural Science Foundation of Guangdong Province, China (Grant No. S2013010015795).

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

Chen Zhan-Xu (陈湛旭)a b, Wan Wei (万巍)a, Zhang Bai-Jun (张佰君)b, He Ying-Ji (何影记)a, Jin Chong-Jun (金崇君)b   

  1. a School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
    b State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2014-06-03 Revised:2014-09-10 Online:2014-12-15 Published:2014-12-15
  • Contact: Chong-Jun E-mail:jinchjun@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, 11174061, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, the National Basic Research Program of China (Grant No. 2010CB923200), and the Natural Science Foundation of Guangdong Province, China (Grant No. S2013010015795).

摘要: The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

关键词: light-emitting devices, photoluminescence, metallic nanoparticle, nanosphere lithography

Abstract: The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

Key words: light-emitting devices, photoluminescence, metallic nanoparticle, nanosphere lithography

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.55.-m (Photoluminescence, properties and materials) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 81.16.Nd (Micro- and nanolithography)