中国物理B ›› 2026, Vol. 35 ›› Issue (4): 47701-047701.doi: 10.1088/1674-1056/ae0d59

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Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS2

Yimai Jiang(蒋伊麦), Jianing Tan(谭家宁), Meng Ge(葛蒙), and Gang Ouyang(欧阳钢)†   

  1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
  • 收稿日期:2025-08-03 修回日期:2025-09-15 接受日期:2025-09-30 出版日期:2026-03-24 发布日期:2026-03-24
  • 基金资助:
    This study was supported by the National Natural Science Foundation of China (Grant No. 12474226).

Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS2

Yimai Jiang(蒋伊麦), Jianing Tan(谭家宁), Meng Ge(葛蒙), and Gang Ouyang(欧阳钢)†   

  1. Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
  • Received:2025-08-03 Revised:2025-09-15 Accepted:2025-09-30 Online:2026-03-24 Published:2026-03-24
  • Contact: Gang Ouyang E-mail:gangouy@hunnu.edu.cn
  • Supported by:
    This study was supported by the National Natural Science Foundation of China (Grant No. 12474226).

摘要: To enhance the transport properties of monolayer MoS$_{2}$ (ML-MoS$_{2}$)-based electronic devices, we systematically investigate the curvature-dependent electronic structure and carrier mobility in a corrugated ML-MoS$_{2}$ using density functional theory and the non-equilibrium Green's function method. We reveal that localized strain induces a polarized electric field, which modifies the band structure and delocalizes the electronic states, thereby significantly improving charge transport efficiency. The conductance along the zigzag direction exhibits 10$^{7}$-fold enhancement with increasing curvature. At a maximum local strain of 10%, the electronic mobility reaches 613.68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, representing a 9.1-fold improvement over planar ML-MoS$_{2}$. Our results agree well with available evidence and provide crucial insights for designing high-performance devices via strain engineering.

关键词: density functional theory, corrugated monolayer MoS2, strain engineering, transport properties

Abstract: To enhance the transport properties of monolayer MoS$_{2}$ (ML-MoS$_{2}$)-based electronic devices, we systematically investigate the curvature-dependent electronic structure and carrier mobility in a corrugated ML-MoS$_{2}$ using density functional theory and the non-equilibrium Green's function method. We reveal that localized strain induces a polarized electric field, which modifies the band structure and delocalizes the electronic states, thereby significantly improving charge transport efficiency. The conductance along the zigzag direction exhibits 10$^{7}$-fold enhancement with increasing curvature. At a maximum local strain of 10%, the electronic mobility reaches 613.68 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, representing a 9.1-fold improvement over planar ML-MoS$_{2}$. Our results agree well with available evidence and provide crucial insights for designing high-performance devices via strain engineering.

Key words: density functional theory, corrugated monolayer MoS2, strain engineering, transport properties

中图分类号:  (Strain and interface effects)

  • 77.80.bn
73.23.-b (Electronic transport in mesoscopic systems) 71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)