中国物理B ›› 2025, Vol. 34 ›› Issue (10): 104203-104203.doi: 10.1088/1674-1056/add90d

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Non-synchronous strain effects on a hetero-bonded van derWaals material CrSBr

Junming Guo(郭俊明)1,†, Wenqiang Shi(时文强)1,†, Kaipeng Ni(倪凯鹏)1, Xing Chen(陈行)1, Daxiang Liu(刘大象)2, Xue Liu(刘学)1, Shouguo Wang(王守国)1, Qian Li(李倩)2,‡, Rui-Chun Xiao(肖瑞春)1,§, and Mengmeng Yang(杨蒙蒙)1,¶   

  1. 1 Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Faculty of Materials Science and Engineering, Anhui University, Hefei 230601, China;
    2 National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China
  • 收稿日期:2025-04-21 修回日期:2025-05-13 接受日期:2025-05-15 发布日期:2025-09-25
  • 通讯作者: Qian Li, Rui-Chun Xiao, Mengmeng Yang E-mail:liqian89@ustc.edu.cn;xiaoruichun@ahu.edu.cn;mmyangphy@ahu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52471248, 12174364, 12204009, and 12104003), the Natural Science Foundation of Anhui Province, China (Grant No. 2308085Y04), the National Key Research and Development Program of China (Grant No. 2023YFA1406400), and the Fundamental Research Funds for the Central Universities (Grant No. wk2310000104).

Non-synchronous strain effects on a hetero-bonded van derWaals material CrSBr

Junming Guo(郭俊明)1,†, Wenqiang Shi(时文强)1,†, Kaipeng Ni(倪凯鹏)1, Xing Chen(陈行)1, Daxiang Liu(刘大象)2, Xue Liu(刘学)1, Shouguo Wang(王守国)1, Qian Li(李倩)2,‡, Rui-Chun Xiao(肖瑞春)1,§, and Mengmeng Yang(杨蒙蒙)1,¶   

  1. 1 Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Faculty of Materials Science and Engineering, Anhui University, Hefei 230601, China;
    2 National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China
  • Received:2025-04-21 Revised:2025-05-13 Accepted:2025-05-15 Published:2025-09-25
  • Contact: Qian Li, Rui-Chun Xiao, Mengmeng Yang E-mail:liqian89@ustc.edu.cn;xiaoruichun@ahu.edu.cn;mmyangphy@ahu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 52471248, 12174364, 12204009, and 12104003), the Natural Science Foundation of Anhui Province, China (Grant No. 2308085Y04), the National Key Research and Development Program of China (Grant No. 2023YFA1406400), and the Fundamental Research Funds for the Central Universities (Grant No. wk2310000104).

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摘要： The van der Waals (vdW) material CrSBr exhibits a distinctive hetero-bonded structure, characterized by fence-like and rectangular configurations viewed from different crystallographic orientations. Mechanical deformation of this unique structure can induce significant anisotropic electronic and optical properties. In this study, we systematically investigate the non-synchronous strain response of CrSBr through theoretical and experimental approaches. Our results reveal that the electronic band structure of CrSBr is predominantly governed by the intralayer Cr-S bonds along the $b$-axis, whereas the characteristic Raman peak A$_{\rm g}^{3}$ arises from interlayer Cr-S bond vibrations in each quasi-monolayer. Notably, the different strain responses of these two types of bonds, stemming from the hetero-bonded architecture, lead to distinct behaviors in photoluminescence (PL) and Raman spectra under uniaxial strain. Specifically, the electronic band structure demonstrates heightened sensitivity to tensile strain along the $b$-axis, while the A$_{\rm g}^{3}$ Raman mode exhibits greater sensitivity to strain along the $a$-axis. These insights advance the understanding of strain-induced anisotropies in CrSBr and provide valuable guidance for the design of vdW-based optoelectronic devices.

关键词: hetero-bond, uniaxial strain, CrSBr

Abstract: The van der Waals (vdW) material CrSBr exhibits a distinctive hetero-bonded structure, characterized by fence-like and rectangular configurations viewed from different crystallographic orientations. Mechanical deformation of this unique structure can induce significant anisotropic electronic and optical properties. In this study, we systematically investigate the non-synchronous strain response of CrSBr through theoretical and experimental approaches. Our results reveal that the electronic band structure of CrSBr is predominantly governed by the intralayer Cr-S bonds along the $b$-axis, whereas the characteristic Raman peak A$_{\rm g}^{3}$ arises from interlayer Cr-S bond vibrations in each quasi-monolayer. Notably, the different strain responses of these two types of bonds, stemming from the hetero-bonded architecture, lead to distinct behaviors in photoluminescence (PL) and Raman spectra under uniaxial strain. Specifically, the electronic band structure demonstrates heightened sensitivity to tensile strain along the $b$-axis, while the A$_{\rm g}^{3}$ Raman mode exhibits greater sensitivity to strain along the $a$-axis. These insights advance the understanding of strain-induced anisotropies in CrSBr and provide valuable guidance for the design of vdW-based optoelectronic devices.

Key words: hetero-bond, uniaxial strain, CrSBr

中图分类号:  (Mechanical effects of light on material media, microstructures and particles)

  • 42.50.Wk
68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)