Electric field dependence of spin qubit in a Si-MOS quantum dot

doi:10.1088/1674-1056/ad3812

中国物理B ›› 2024, Vol. 33 ›› Issue (6): 60312-060312.doi: 10.1088/1674-1056/ad3812

Electric field dependence of spin qubit in a Si-MOS quantum dot

Rong-Long Ma(马荣龙)^1,2,†, Ming Ni(倪铭)^1,2,†, Yu-Chen Zhou(周雨晨)^1,2, Zhen-Zhen Kong(孔真真)³, Gui-Lei Wang(王桂磊)^3,4,5, Di Liu(刘頔)^1,2, Gang Luo(罗刚)^1,2, Gang Cao(曹刚)^1,2,5, Hai-Ou Li(李海欧)^1,2,5,‡, and Guo-Ping Guo(郭国平)^1,2,5,6

1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
4 Beijing Superstring Academy of Memory Technology, Beijing 100176, China;
5 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China;
6 Origin Quantum Computing Company Limited, Hefei 230026, China

收稿日期:2024-03-05 修回日期:2024-03-22 接受日期:2024-03-27 出版日期:2024-06-18 发布日期:2024-06-18
通讯作者: Hai-Ou Li E-mail:haiouli@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12074368, 92165207, 12034018, and 92265113), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300), the Anhui Province Natural Science Foundation (Grant No. 2108085J03) and the USTC Tang Scholarship.

Electric field dependence of spin qubit in a Si-MOS quantum dot

1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
3 Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
4 Beijing Superstring Academy of Memory Technology, Beijing 100176, China;
5 Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China;
6 Origin Quantum Computing Company Limited, Hefei 230026, China

Received:2024-03-05 Revised:2024-03-22 Accepted:2024-03-27 Online:2024-06-18 Published:2024-06-18
Contact: Hai-Ou Li E-mail:haiouli@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 12074368, 92165207, 12034018, and 92265113), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302300), the Anhui Province Natural Science Foundation (Grant No. 2108085J03) and the USTC Tang Scholarship.

摘要/Abstract

摘要： Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin-valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing. Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot (QD) device. For one-electron qubit, we measure two electric-dipole spin resonance (EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability, individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

关键词: silicon-based quantum computing, valley, electric-dipole spin resonance

Abstract: Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin-valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum computing. Here, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot (QD) device. For one-electron qubit, we measure two electric-dipole spin resonance (EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability, individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

Key words: silicon-based quantum computing, valley, electric-dipole spin resonance

中图分类号: (Quantum computation architectures and implementations)

03.67.Lx

03.67.-a (Quantum information) 68.65.Hb (Quantum dots (patterned in quantum wells))

Rong-Long Ma(马荣龙), Ming Ni(倪铭), Yu-Chen Zhou(周雨晨), Zhen-Zhen Kong(孔真真), Gui-Lei Wang(王桂磊), Di Liu(刘頔), Gang Luo(罗刚), Gang Cao(曹刚), Hai-Ou Li(李海欧), and Guo-Ping Guo(郭国平). Electric field dependence of spin qubit in a Si-MOS quantum dot[J]. 中国物理B, 2024, 33(6): 60312-060312.

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Electric field dependence of spin qubit in a Si-MOS quantum dot

Electric field dependence of spin qubit in a Si-MOS quantum dot

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