中国物理B ›› 2023, Vol. 32 ›› Issue (10): 107305-107305.doi: 10.1088/1674-1056/ace15e

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Optimization of thermoelectric properties in elemental tellurium via high pressure

Dongyao Zhao(赵东尧)1,†, Manman Yang(杨曼曼)1,†, Hairui Sun(孙海瑞)1,2,‡, Xin Chen(陈欣)1,2, Yongsheng Zhang(张永胜)1,2, and Xiaobing Liu(刘晓兵)1,2,§   

  1. 1 Laboratory of High-Pressure Physics and Materials Science(HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China;
    2 Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu 273165, China
  • 收稿日期:2023-04-21 修回日期:2023-06-09 接受日期:2023-06-25 出版日期:2023-09-21 发布日期:2023-09-27
  • 通讯作者: Hairui Sun, Xiaobing Liu E-mail:hairuisun1216@qfnu.edu.cn;xiaobing.phy@qfnu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11804185, 11974208, 52172212, 52102335, and 52002217) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2020YQ05, ZR2019MA054, 2019KJJ020, ZR2021YQ03, and 2022KJA043).

Optimization of thermoelectric properties in elemental tellurium via high pressure

Dongyao Zhao(赵东尧)1,†, Manman Yang(杨曼曼)1,†, Hairui Sun(孙海瑞)1,2,‡, Xin Chen(陈欣)1,2, Yongsheng Zhang(张永胜)1,2, and Xiaobing Liu(刘晓兵)1,2,§   

  1. 1 Laboratory of High-Pressure Physics and Materials Science(HPPMS), School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China;
    2 Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu 273165, China
  • Received:2023-04-21 Revised:2023-06-09 Accepted:2023-06-25 Online:2023-09-21 Published:2023-09-27
  • Contact: Hairui Sun, Xiaobing Liu E-mail:hairuisun1216@qfnu.edu.cn;xiaobing.phy@qfnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11804185, 11974208, 52172212, 52102335, and 52002217) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2020YQ05, ZR2019MA054, 2019KJJ020, ZR2021YQ03, and 2022KJA043).

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摘要： High pressure and high temperature (HPHT) technology, as an extreme physical condition, plays an important role in regulating the properties of materials, having the advantages of enhancing doping efficiency, refining grain size, and manufacturing defects, therefore it is quite necessary to study the effectiveness on tuning thermoelectric properties. Elemental telluride, a potential candidate for thermoelectric materials, has the poor doping efficiency and high resistivity, which become an obstacle for practical applications. Here, we report the realization of a dual optimization of electrical behaviors and thermal conductivity through HPHT method combining with the introduction of black phosphorus. The results show the maximum $zT$ of 0.65 and an average $zT$ of 0.42 (300 K-610 K), which are increased by 55% and 68% in the synthesis pressure regulation system, respectively. This study clarifies that the HPHT method has significant advantages in modulating the thermoelectric parameters, providing a reference for seeking high performance thermoelectric materials.

关键词: high pressure, thermoelectric, thermal conductivity, power factor

Abstract: High pressure and high temperature (HPHT) technology, as an extreme physical condition, plays an important role in regulating the properties of materials, having the advantages of enhancing doping efficiency, refining grain size, and manufacturing defects, therefore it is quite necessary to study the effectiveness on tuning thermoelectric properties. Elemental telluride, a potential candidate for thermoelectric materials, has the poor doping efficiency and high resistivity, which become an obstacle for practical applications. Here, we report the realization of a dual optimization of electrical behaviors and thermal conductivity through HPHT method combining with the introduction of black phosphorus. The results show the maximum $zT$ of 0.65 and an average $zT$ of 0.42 (300 K-610 K), which are increased by 55% and 68% in the synthesis pressure regulation system, respectively. This study clarifies that the HPHT method has significant advantages in modulating the thermoelectric parameters, providing a reference for seeking high performance thermoelectric materials.

Key words: high pressure, thermoelectric, thermal conductivity, power factor

中图分类号:  (Thermoelectric effects)

  • 73.50.Lw
91.60.Gf (High-pressure behavior) 61.82.Fk (Semiconductors)