Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

doi:10.1088/1674-1056/ac9180

中国物理B ›› 2023, Vol. 32 ›› Issue (6): 64209-064209.doi: 10.1088/1674-1056/ac9180

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

Xue-Ke Wang(王雪珂)¹, Ya-Bin Sun(孙亚宾)^1,†, Zi-Yu Liu(刘子玉)^2,‡, Yun Liu(刘赟)¹, Xiao-Jin Li(李小进)¹, and Yan-Ling Shi(石艳玲)¹

1 Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2 School of Microelectronics, Fudan University, Shanghai 200433, China

收稿日期:2022-04-25 修回日期:2022-09-06 接受日期:2022-09-13 出版日期:2023-05-17 发布日期:2023-05-29
通讯作者: Ya-Bin Sun, Zi-Yu Liu E-mail:ybsun@ee.ecnu.edu.cn;liuziyu@fudan.edu.cn
基金资助:
Project supported in part by the National Natural Science Foundation of China (Grant No. 61974056), the Natural Science Foundation of Shanghai (Grant No. 19ZR1471300), Shanghai Science and Technology Innovation Action Plan (Grant No. 19511131900), and Shanghai Science and Technology Explorer Plan (Grant No. 21TS1401700).

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

Xue-Ke Wang(王雪珂)¹, Ya-Bin Sun(孙亚宾)^1,†, Zi-Yu Liu(刘子玉)^2,‡, Yun Liu(刘赟)¹, Xiao-Jin Li(李小进)¹, and Yan-Ling Shi(石艳玲)¹

1 Department of Electrical Engineering, East China Normal University, Shanghai 200241, China;
2 School of Microelectronics, Fudan University, Shanghai 200433, China

Received:2022-04-25 Revised:2022-09-06 Accepted:2022-09-13 Online:2023-05-17 Published:2023-05-29
Contact: Ya-Bin Sun, Zi-Yu Liu E-mail:ybsun@ee.ecnu.edu.cn;liuziyu@fudan.edu.cn
Supported by:
Project supported in part by the National Natural Science Foundation of China (Grant No. 61974056), the Natural Science Foundation of Shanghai (Grant No. 19ZR1471300), Shanghai Science and Technology Innovation Action Plan (Grant No. 19511131900), and Shanghai Science and Technology Explorer Plan (Grant No. 21TS1401700).

摘要/Abstract

摘要： The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm²/mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm²/mg to 10 MeV·cm²/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to w_t. The underlying physical mechanism is explored and discussed.

关键词: heavy ion strike, EHBNT-TFET, single event transient (SET), transient drain current

Abstract: The single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm²/mg, which is much higher than the on-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm²/mg to 10 MeV·cm²/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increase by 0.014 mA and 0.06 fC, respectively, as the drain bias increases from 0.1 V to 0.9 V. Whether from the horizontal or the vertical direction, the most sensitive hit location is related to w_t. The underlying physical mechanism is explored and discussed.

Key words: heavy ion strike, EHBNT-TFET, single event transient (SET), transient drain current

中图分类号: (Environmental and radiation effects on optical elements, devices, and systems)

42.88.+h

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))

Xue-Ke Wang(王雪珂), Ya-Bin Sun(孙亚宾), Zi-Yu Liu(刘子玉), Yun Liu(刘赟), Xiao-Jin Li(李小进), and Yan-Ling Shi(石艳玲). Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer[J]. 中国物理B, 2023, 32(6): 64209-064209.

参考文献

[1] Taur Y2002 IBM J. Res. Dev. 46 213
[2] Seabaugh A C and Zhang Q2010 Proc. IEEE 98 2095
[3] Asra R, Shrivastava M, Murali K V R M, Pandey R K, Gossner H and Rao V R2011 IEEE Trans. Electron Dev. 58 1855
[4] Datta S, Liu H and Narayanan V2014 Microelectron. Reliab. 54 861
[5] Raushan M A, Alam N and Siddiqui M J2018 IEEE Trans. Electron. Dev. 65 4701
[6] Boucart K and Ionescu A M2007 IEEE Trans. Electron Dev. 54 1725
[7] Kim S W, Kim H W, Liu T J K, Choi W Y and Park B G2016 IEEE Trans. Electron. Dev. 63 1774
[8] Seo J H, Yoon Y J, Lee S, Lee J H, Cho S and Kang I M2015 Curr. Appl. Phys. 15 208
[9] Musalgaonkar G, Sahay S, Saxena R S and Kumar M J2019 IEEE Trans. Electron. Dev. 66 2809
[10] Lattanzio L, Michielis L D and Ionescu A M2012 Solid State Electron. 74 85
[11] Wang X, Sun Y, Liu Z, Liu Y, Li X and Shi Y2022 Silicon 14 9071
[12] Qin J, Chen S, Liu B, Liu Z, Liang B and Du Y2011 Chin. Phys. B 20 129401
[13] Moreno E G, Picos R, Isern E, Roca M, Bota S and Suenaga K2009 IEEE Trans. Nucl. Sci. 56 2910
[14] Dodd P E, Shaneyfelt M R, Schwank J R and Felix J A2010 IEEE Trans. Nucl. Sci. 57 1747
[15] Kim J, Lee J S, Han J W and Meyyappan M2018 IEEE Electron. Dev. Lett. 39 1840
[16] Kaushal G, Rathod S S, Maheshwaram S, Manhas S K, Saxena A K and Dasgupta S2012 IEEE Trans. Electron. Dev. 59 1563
[17] Munteanu D2008 IEEE Trans. Nucl. Sci. 55 1854
[18] Li D, Liu T, Zhao P, Wu Z, Wang T and Liu J2022 Chin. Phys. B 31 056106
[19] Manohari R G, Nagarajan K K and Srinivasan R2017 Int. Conf. On Nextgen Electronic Technologies: Silicon to Software, Mar. 23-25, 2017, Chennai, India, p. 172
[20] Wu Y and Takahashi Y 2017 ECS Meeting Abstracts 2 1143
[21] Wang Q, Liu H, Wang S and Chen S2018 IEEE Trans. Nucl. Sci. 65 2250
[22] Chong C, Liu H, Wang S, Chen S and Xie H2021 Micromachines 12 609
[23] Synopsys Inc. 2018 Sentaurus Device User Guide
[24] Fahad H M and Hussain M M2013 IEEE Trans. Electron. Dev. 60 1034
[25] Sun Y, Shao J, Liu Z, Li X, Liu Y and Shi Y2021 IEEE Trans. Electron. Dev. 68 6001
[26] Tian G, Bi J, Xu G, Xi K, Yang X, Yin H, Xu Q and Wang W2020 Semicond. Sci. Technol. 35 105010
[27] Liu H, Cotter M, Datta S and Narayanan V2014 IEEE Trans. Device Mater. Reliab. 14 732
[28] Liu Z, Chen S, Chen J, Qin J and Liu R2012 Chin. Phys. B 21 099401

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 2

Metrics

本文评价

推荐阅读 0

[1]	孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘, 余永涛, 马英起, 封国强, 韩建伟. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor[J]. 中国物理B, 2013, 22(5): 56103-056103.
[2]	郭阳, 陈建军, 何益百, 梁斌, 刘必慰. Dual role of multiple-transistor charge sharing collection in single-event transient[J]. 中国物理B, 2013, 22(4): 46103-046103.